Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N3448
DESCRIPTION
·With
TO-3 package
·Excellent
Safe Operating Area
APPLICATIONS
·Designed
for medium-switching
and amplifier applications.
PINNING
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
100
100
7
7.5
115
150
-65~200
UNIT
V
V
V
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
(th) jc
PARAMETER
Thermal resistance junction to case
VALUE
1.17
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CE(sat)-1
V
CE(sat)-2
V
BE(on)
I
CEO
I
CBO
I
EBO
h
FE
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=30mA ;I
B
=0
I
C
=5A I
B
=0.5A
I
C
=7A I
B
=1.5A
I
C
=5A ; V
CE
=5V
V
CE
=80V; I
B
=0
V
CB
=100V; I
E
=0
V
EB
=7V; I
C
=0
I
C
=5A ; V
CE
=5V
I
C
=0.5A ; V
CE
=10V
50
10
MIN
100
TYP.
2N3448
MAX
UNIT
V
1.2
3.0
1.8
0.7
0.1
0.1
120
V
V
V
mA
mA
mA
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N3448
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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