2N6898TXV datasheet, PDF - EEWORLD Datasheet

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2N6898TXV: DescriptionPower Field-Effect Transistor, 25A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE; CategoryDiscrete semiconductor The transistor; File Size179KB，4 Pages; ManufacturerHarris; Websitehttp://www.harris.com/

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2N6898TXV Overview

Power Field-Effect Transistor, 25A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE

2N6898TXV Parametric

Parameter Name	Attribute value
package instruction	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	RADIATION HARDENED
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (ID)	25 A
Maximum drain-source on-resistance	0.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	500 pF
JEDEC-95 code	TO-204AE
JESD-30 code	O-MBFM-P2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Polarity/channel type	P-CHANNEL
Maximum power consumption environment	150 W
Maximum pulsed drain current (IDM)	60 A
Certification status	Not Qualified
Guideline	MILITARY STANDARD (USA)
surface mount	NO
Terminal form	PIN/PEG
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	650 ns
Maximum opening time (tons)	300 ns
Base Number Matches	1

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2N6898TXV Related Products

	2N6898TXV	2N6898TX	JANTXV2N6898	JANTX2N6898
Description	Power Field-Effect Transistor, 25A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE	Power Field-Effect Transistor, 25A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE	Power Field-Effect Transistor, 25A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE	Power Field-Effect Transistor, 25A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE
package instruction	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	unknow	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99
Other features	RADIATION HARDENED	RADIATION HARDENED	RADIATION HARDENED	RADIATION HARDENED
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V	100 V	100 V	100 V
Maximum drain current (ID)	25 A	25 A	25 A	25 A
Maximum drain-source on-resistance	0.2 Ω	0.2 Ω	0.2 Ω	0.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	500 pF	500 pF	500 pF	500 pF
JEDEC-95 code	TO-204AE	TO-204AE	TO-204AE	TO-204AE
JESD-30 code	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2
Number of components	1	1	1	1
Number of terminals	2	2	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL
Maximum power consumption environment	150 W	150 W	150 W	150 W
Maximum pulsed drain current (IDM)	60 A	60 A	60 A	60 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Guideline	MILITARY STANDARD (USA)	MILITARY STANDARD (USA)	MILITARY STANDARD (USA)	MILITARY STANDARD (USA)
surface mount	NO	NO	NO	NO
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Maximum off time (toff)	650 ns	650 ns	650 ns	650 ns
Maximum opening time (tons)	300 ns	300 ns	300 ns	300 ns
Base Number Matches	1	1	1	1

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