2N6898 datasheet, PDF - EEWORLD Datasheet

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2N6898: DescriptionPower Field-Effect Transistor, 25A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE; CategoryDiscrete semiconductor The transistor; File Size173KB，2 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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2N6898 Overview

Power Field-Effect Transistor, 25A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE

2N6898 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Objectid	1916529919
package instruction	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	RADIATION HARDENED
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (ID)	25 A
Maximum drain-source on-resistance	0.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-204AE
JESD-30 code	O-MBFM-P2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Maximum pulsed drain current (IDM)	60 A
Certification status	Not Qualified
Guideline	MILITARY STANDARD (USA)
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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TECHNICAL DATA

POWER MOSFET P CHANNEL

Devices

2N6898

•

HIGH INPUT IMPEDANCE

LOW R

DS(ON)

MAJORITY CARRIER DEVICE

LINEAR TRANSFER CHARACTERISTICS

25 AMPERE

100 VOLTS

0.2

Ω

ABSOLUTE MAXIMUM RATINGS (T

C

= 25

0

C unless otherwise noted)

Parameters/Test Conditions

Symbol

Value

Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

TC = 250C

Pulsed Drain Current(1)

Power Dissipation

TC = 250C

Operating Junction & Storage Tempature Range

Lead Tempature (1/16” from case for 10 secs.)

V

DS

V

GS

I

D

I

DM

P

D

T

J

,

T

stg

T

L

Symbol

R

th

JC

-100

+/-20

-25

-60

150

-55 to +150

260

Max.

0.83

V

A

W

0

C

0

C

THERMAL RESISTANCE RATINGS

Thermal Resistance

Junction-to-Case

0

Unit

C/W

TO-3

(1) Pulse width limited by maximum junction tempature

ELECTRICAL CHARACTERISTICS (T

C

= 25

0

C unless otherwise noted)

Parameters/Test Conditions

Drain-Source Breakdown Voltage

V

GS

= 0 V, I

D

= 1000 µA

Gate Threshold Voltage

I

D

= 250 µA

Gate-Body Leakage

V

GS

= At Rated V

GS

Zero Gate Voltage Drain Current

V

DS

= -80 V

Zero Gate Voltage Drain Current

V

DS

= -80V

T

J

= 125

0

C

Drain-Source On-State Resistance (2)

V

GS

= -10V, I

D

= 15.8 A

Forward Transconductance (2)

VDS = -10 V, ID = 15.8 A

Symbol

V

(BR)DSS

V

GS(th)

I

GSS

I

DSS

I

DSS

r

DS(on)

g

Min.

-100

-2

Max.

Unit

V

-4

100

1

50

0.2

V

nA

µA

Ω

mho

fs

4

15

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

12104

Page 1 of 2

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