Ordering number : EN2005B
2SA1416 / 2SC3646
SANYO Semiconductors
DATA SHEET
2SA1416 / 2SC3646
Features
•
•
•
•
PNP / NPN Epitaxial Planar Silicon Transistors
High-Voltage Switching Applications
Adoption of FBET, MBIT processes.
High breakdown voltage and large current capacity.
Fast switching speed.
Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s.
Specifications
( ) : 2SA1416
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Mounted on a ceramic board (250mm
✕0.8mm)
2
Conditions
Ratings
(--)120
(--)100
(--)6
(--)1
(--)2
500
1.3
150
--55 to +150
Unit
V
V
V
A
A
mW
W
°C
°C
Marking 2SA1416 : AB
2SC3646 : CB
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
www.semiconductor-sanyo.com/network
31010EA TK IM / O3103TN (KT)/71598HA (KT)/3277KI/N255MW, TS No.2005-1/5
2SA1416 / 2SC3646
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
VCB=(--)100V, IE=0A
VEB=(-
-)4V, IC=0A
VCE=(--)5V, IC=(-
-)100mA
VCE=(--)10V, IC=(-
-)100mA
VCB=(--)10V, f=1MHz
IC=(-
-)400mA, IB=(-
-)40mA
IC=(-
-)400mA, IB=(-
-)40mA
IC=(-
-)10μA, IE=0A
IC=(-
-)1mA, RBE=∞
IE=(-
-)10μA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
(--)120
(--)100
(--)6
(80)80
(700)850
(40)50
100*
120
(13)8.5
(-
-0.2)0.1
(--)0.85
(-
-0.6)0.4
(--)1.2
Ratings
min
typ
max
(--)100
(--)100
400*
MHz
pF
V
V
V
V
V
ns
ns
ns
Unit
nA
nA
*:
The 2SA1416 / 2SC3646 are classified by 100mA hFE as follows:
Rank
R
S
T
hFE
100 to 200
140 to 280
200 to 400
Package Dimensions
unit : mm (typ)
7007B-004
Switching Time Test Circuit
PW=20μs
D.C.≤1%
INPUT
VR
50Ω
+
100μF
--5V
+
470μF
50V
IB1
IB2
RB
RL
IC=10IB1=--10IB2=400mA
(For PNP, the polarity is reversed)
No.2005-2/5
2SA1416 / 2SC3646
--1.0
IC -- VCE
2SA1416
5m
A
mA
30
--
1.0
IC -- VCE
2SC3646
A
30m
25m
--15
mA
--10m
A
A
20mA
15mA
10mA
5mA
Collector Current, IC -- A
mA
20
--
--0.6
--5mA
Collector Current, IC -- A
--0.8
--2
0.8
0.6
--3mA
--0.4
3mA
0.4
2mA
--2mA
--1mA
--0.2
0.2
1mA
0
0
IB=0mA
--1
--2
--3
--4
--5
ITR03526
0
IB=0mA
0
1
2
3
4
5
ITR03527
Collector-to-Emitter Voltage, VCE -- V
--500
IC -- VCE
--2.0m
Collector-to-Emitter Voltage, VCE -- V
500
IC -- VCE
2.0mA
A
Collector Current, IC -- mA
Collector Current, IC -- mA
--400
400
2.5
mA
--2.5
mA
2SA1416
2SC3646
--1.5mA
--300
1.5mA
300
--1.0mA
--200
1.0mA
200
--0.5mA
--100
0.5mA
100
0
0
IB=0mA
--
10
--
20
--
30
--
40
Collector-to-Emitter Voltage, VCE -- V
--
50
ITR03528
0
IB=0mA
0
10
20
30
40
50
ITR03529
--
1.2
--
1.0
IC -- VBE
Collector-to-Emitter Voltage, VCE -- V
1.2
IC -- VBE
2SA1416
VCE=--5V
1.0
2SC3646
VCE=5V
Collector Current, IC -- A
Collector Current, IC -- A
--
0.8
--
0.6
0.8
0.6
Ta=7
5
°
C
25
°
C
--25
°
C
--
0.2
0
0.2
0
--
0.2
--
0.4
--
0.6
--
0.8
--
1.0
--
1.2
Base-to-Emitter Voltage, VBE -- V
ITR03530
0
0
0.2
0.4
0.6
Ta=7
5
--
0.4
0.4
°
C
25
°
C
--25
°
C
0.8
1.0
1.2
ITR03531
1000
7
5
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
1000
7
5
hFE -- IC
2SA1416
VCE=--5V
Ta=75
°
C
2SC3646
VCE=5V
Ta=75
°
C
DC Current Gain, hFE
DC Current Gain, hFE
3
2
3
2
25
°
C
100
7
5
3
2
--25
°
C
100
7
5
3
2
25
°
C
--25
°
C
10
7
--
0.01
2
3
2
3
5
--
0.1
Collector Current, IC -- A
5
7
7
--
1.0
2
3
10
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
ITR03532
Collector Current, IC -- A
ITR03533
No.2005-3/5
2SA1416 / 2SC3646
3
f T -- IC
2SA1416 / 2SC3646
VCE=10V
100
7
Cob -- VCB
2SA1416 / 2SC3646
f=1MHz
Gain-Bandwidth Product, f T -- MHz
2
2SA1416
100
7
5
Output Capacitance, Cob -- pF
5
3
2
2SC3646
2SA
10
7
5
3
141
6
3
2
2SC
364
6
For PNP, minus sign is omitted
10
7 0.01
2
3
5
7
0.1
2
3
5
For PNP, minus sign is omitted
2
7 1.0
2
3
5
7
10
2
3
5
Collector Current, IC -- A
--
1000
7
7 1.0
ITR03538
VCE(sat) -- IC
Collector-to-Base Voltage, VCB -- V
1000
7
7 100
2
ITR03539
VCE(sat) -- IC
2SA1416
IC / IB=10
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
2SC3646
IC / IB=10
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
5
5
3
2
3
2
--
100
7
5
3
2
100
7
5
3
2
7
Ta=
5
°
C
--25
°
C
25
°
C
Ta=75
°
C
25
°
C
7 0.01
2
3
5
7 0.1
2
--25
°
C
3
5
7 1.0
2
ITR03537
7
--
0.01
2
3
2
3
--
0.1
Collector Current, IC -- A
5
7
5
7
--
1.0
2
ITR03536
10
7
--
10
7
VBE(sat) -- IC
Collector Current, IC -- A
VBE(sat) -- IC
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
2SA1416
IC / IB=10
2SC3646
IC / IB=10
5
5
3
2
3
2
--
1.0
7
5
Ta=--25
°C
1.0
7
5
Ta=--25
°
C
25
°
C
75
°
C
5
7
25
°
C
7 0.01
2
3
5
75
°
C
7 0.1
2
3
5
7
2
1.0
ITR03535
3
7
--
0.01
2
3
2
3
--
0.1
Collector Current, IC -- A
5
7
--
1.0
2
3
ITR03534
1.6
1.4
Collector Current, IC -- A
ASO
5
3
2
PC -- Ta
2SA1416 / 2SC3646
ICP=2A
IC=1A
DC
Collector Dissipation, PC -- W
Collector Current, IC -- A
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
10
0m
s
10
1ms
ms
1.3
1.2
1.0
0.8
0.6
0.5
0.4
0.2
0
M
ou
nt
ed
op
era
tio
n
on
a
ce
ra
m
ic
bo
a
No h
For PNP, minus sign is omitted
2SA1416 / 2SC3646
Single pulse Ta=25
°
C
Mounted on a ceramic board (250mm
2
✕0.8mm)
5
7 1.0
2
3
5
7
10
2
3
5
eat s
rd
(2
50
m
ink
m
2
✕
0.8
m
m
)
160
Collector-to-Emitter Voltage, VCE --
2
7 100
V
ITR03540
0
20
40
60
80
100
120
140
Ambient Temperature, Ta --
°C
ITR03541
No.2005-4/5
2SA1416 / 2SC3646
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of March, 2010. Specifications and information herein are subject
to change without notice.
PS No.2005-5/5
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