2SB1025
Silicon PNP Epitaxial
ADE-208-1036 (Z)
1st. Edition
Mar. 2001
Application
•
Low frequency power amplifier
•
Complementary pair with 2SD1418
Outline
UPAK
1
3
2
4
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
2SB1025
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
i
C(peak)
*
1
P
C
*
2
Tj
Tstg
Ratings
–120
–80
–5
–1
–2
1
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Notes: 1. PW
≤
10 ms, Duty cycle
≤
20%
2. Value on the alumina ceramic board (12.5
×
20
×
0.7 mm)
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current
DC current transfer ratio
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE1
*
1
h
FE2
Collector to emitter saturation
voltage
Base to emitter voltage
Gain bandwidth product
Collector output capacitance
Note:
Mark
h
FE1
V
CE(sat)
V
BE
f
T
Cob
Min
–120
–80
–5
—
60
30
—
—
—
—
Typ
—
—
—
—
—
—
—
—
140
20
Max
—
—
—
–10
320
—
–1
–0.9
—
—
V
V
MHz
pF
Unit
V
V
V
µA
Test conditions
I
C
= –10
µA,
I
E
= 0
I
C
= –1 mA, R
BE
=
∞
I
E
= –10
µA,
I
C
= 0
V
CB
= –100 V, I
E
= 0
V
CE
= –5 V, I
C
= –150 mA
V
CE
= –5 V,
I
C
= –500 mA (Pulse test)
I
C
= –500 mA,
I
B
= –50 mA (Pulse test)
V
CE
= –5 V, I
C
= –150 mA
V
CE
= –5 V, I
C
= –150 mA
V
CB
= –10 V, I
E
= 0,
f = 1 MHz
1. The 2SB1025 is grouped by h
FE1
as follows.
DH
60 to 120
DJ
100 to 200
DK
160 to 320
2
2SB1025
Maximum Collector Dissipation Curve
1.2
Collector Power Dissipation Pc (W)
(on the alumina ceramic board)
Collector Current I
C
(A)
Typical Output Characteristics
–1.0
0
–12
0
–10
–80
–60
–0.8
0.8
–0.6
–0.4
0.4
–40
–30
0
–2
–10
5
–
–2
–0.2
–1
–0.5 mA
I
B
= 0
0
50
100
150
Ambient Temperature Ta (°C)
0
–2
–4
–6
–8
–10
Collector to Emitter Voltage V
CE
(V)
Typical Output Characteristics
–500
Collector Current I
C
(mA)
–200
–100
–50
–20
–10
V
CE
= –5 V
Pulse
75
°
C
DC Current Transfer Ratio vs.
Collector Current
600
DC Current Transfer Ratio h
FE
500
400
300
200
100
0
–1
V
CE
= –5 V
Pulse
Ta =
Ta = 75°C
25
–25
–5
–2
–1
0
25
–25
–0.2 –0.4 –0.6 –0.8 –1.0
Base to Emitter Voltage V
BE
(V)
–3
–10 –30 –100 –300 –1,000
Collector Current I
C
(mA)
3
2SB1025
Saturation Voltage vs. Collector Current
Collector to Emitter Saturation Voltage
V
CE (sat)
(V)
–0.6
Base to Emitter Saturation Voltage
V
BE (sat)
(V)
–0.5
–0.4
–0.3
–0.2
–0.1
0
–1.2
–1.0
–0.8
–0.6
–0.4
–0.2
0
–1
V
CE (sat)
–3
–10 –30 –100 –300 –1,000
Collector Current I
C
(mA)
I
C
= 10 I
B
Pulse
V
BE (sat)
Ta =
25
75
–25
°
C
Ta = 75°C
25
–25
Gain Bandwidth Product vs.
Collector Current
Collector Output Capacitance C
ob
(pF)
200
100
50
Gain Bandwidth Product f
T
(MHz)
V
CE
= –5 V
300
Collector Output Capacitance vs.
Collector to Base Voltage
f = 1 MHz
I
E
= 0
20
10
5
200
100
–10
–30
–100
–300
Collector Current I
C
(mA)
–1,000
2
–1
–2
–5 –10 –20
–50 –100
Collector to Base Voltage V
CB
(V)
4
2SB1025
Package Dimensions
As of January, 2001
Unit: mm
4.5
±
0.1
0.4
1.8 Max
φ
1
1.5
±
0.1
0.44 Max
(2.5)
(1.5)
1.5 1.5
3.0
0.8 Min
0.44 Max
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
(0.4)
0.53 Max
0.48 Max
2.5
±
0.1
4.25 Max
UPAK
—
Conforms
0.050 g
(0.2)
5
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