EEWORLDEEWORLDEEWORLD

Part Number

Search

2SA1417T

Description
Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-243, ULTRA SMALL, PCP, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size46KB,5 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric Compare View All

2SA1417T Overview

Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-243, ULTRA SMALL, PCP, 3 PIN

2SA1417T Parametric

Parameter NameAttribute value
Objectid1483105606
Parts packaging codeSOT-89
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionCOLLECTOR
Maximum collector current (IC)2 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JEDEC-95 codeTO-243
JESD-30 codeR-PSSO-F3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Maximum power consumption environment1.5 W
Maximum power dissipation(Abs)0.5 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)120 MHz
Ordering number : EN2006C
2SA1417 / 2SC3647
SANYO Semiconductors
DATA SHEET
PNP / NPN Epitaxial Planar Silicon Transistors
2SA1417 / 2SC3647
Features
High-Voltage Switching
Applications
Adoption of FBET, MBIT processes.
High breakdown voltage and large current capacity.
Ultrasmall size making it easy to provide high-density small-sized hybrid ICs.
Specifications
( ) : 2SA1417
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Mounted on a ceramic board (250mm
!0.8mm)
2
Conditions
Ratings
(-
-)120
(-
-)100
(-
-)6
(-
-)2
(-
-)3
500
1.5
150
--55 to +150
Unit
V
V
V
A
A
mW
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitterr Saturation Voltage
Symbol
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
Conditions
VCB=(--)100V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)5V, IC=(-
-)100mA
VCE=(--)10V, IC=(--)100mA
VCB=(--)10V, f=1MHz
IC=(--)1A, IB=(-
-)100mA
IC=(--)1A, IB=(-
-)100mA
100*
120
(25)16
(--0.22)0.13
(--)0.85
(-
-0.6)0.4
(--)1.2
Ratings
min
typ
max
(--)100
(--)100
400*
MHz
pF
V
V
Unit
nA
nA
Continued on next page.
*
; The 2SA1417 / 2S3647 are classified by 100mA hFE as follws:
Rank
R
S
T
hFE
100 to 200
140 to 280
200 to 400
Marking 2SA1417: AC
2SC3647: CC
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
80906 / 22006EA MS IM / O3103TN (KT) / 71598HA (KT) / 3277KI / N255MW, TS No.2006-1/5

2SA1417T Related Products

2SA1417T 2SA1417R 2SC3647R
Description Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-243, ULTRA SMALL, PCP, 3 PIN Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-243, ULTRA SMALL, PCP, 3 PIN Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-243, ULTRA SMALL, PCP, 3 PIN
Objectid 1483105606 1483105594 1483105686
Parts packaging code SOT-89 SOT-89 SOT-89
package instruction SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3
Contacts 3 3 3
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
Shell connection COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 2 A 2 A 2 A
Collector-emitter maximum voltage 100 V 100 V 100 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 200 100 100
JEDEC-95 code TO-243 TO-243 TO-243
JESD-30 code R-PSSO-F3 R-PSSO-F3 R-PSSO-F3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP NPN
Maximum power consumption environment 1.5 W 1.5 W 1.5 W
Maximum power dissipation(Abs) 0.5 W 0.5 W 0.5 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form FLAT FLAT FLAT
Terminal location SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 120 MHz 120 MHz 120 MHz
How to change the Cadence component package individually
How can I change the wrong package setting for a component? I originally wanted 0603, but selected 0402. How can I change it to 0603?...
天天1 PCB Design
SEED-EXP430F5529 USB Experiment Board continues to be popular! ! !
[font=微软雅黑][size=3][color=#06699][url=https://www.eeworld.com.cn/huodong/20130225TI_MSP430F5529/]EEWORLD University Hall: The Use and Development of TI MSP430F5529[/url][/color][color=#000000][/color]...
EEWORLD社区 Microcontroller MCU
Ask about the gain control problem based on THS7001 controllable op amp
I am working on a project recently. The part I am responsible for is to control the gain by controlling the first-stage amplifier. However, controlling the gain requires controlling the feedback resis...
wlmqysh TI Technology Forum
How to get started with silion labs zigbee
As the title says, I have been working on ZigBee development recently, but I don't have any clues....
hbmcjxd RF/Wirelessly
Resistor power selection problem
[color=#333333][font="][size=14px][Ask if you don't understand] [/size][/font][/color][color=#333333][font="][size=14px]A 12V to 5V 3A MP2315 circuit [/size][/font][/color] [color=#333333][font="][siz...
shaorc Analog electronics
Who has the BSP with emulator for wince5.0 mipsii version?
Microsoft provides an armv4i BSP with an emulator. Is there a mips version of the BSP with an emulator?...
xwj1111 Embedded System

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1029  2261  2590  1636  28  21  46  53  33  1 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号