2SA812M4-A datasheet, PDF - EEWORLD Datasheet

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2SA812M4-A: Description100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, MINIMOLD PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size242KB，4 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/; Environmental Compliance

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2SA812M4-A Overview

100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, MINIMOLD PACKAGE-3

2SA812M4-A Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	90
JESD-30 code	R-PDSO-G3
JESD-609 code	e6
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.2 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN BISMUTH
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	180 MHz
Base Number Matches	1

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2SA812M4-A Related Products

	2SA812M4-A	2SA812M5-A	2SA812M6-A	2SA812M7-A	2SA812-A
Description	100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, MINIMOLD PACKAGE-3	100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, MINIMOLD PACKAGE-3	100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, MINIMOLD PACKAGE-3	100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, MINIMOLD PACKAGE-3	100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, MINIMOLD PACKAGE-3
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	3	3	3
Reach Compliance Code	compli	compli	compli	compli	unknow
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V	50 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	90	135	200	300	90
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	260
Polarity/channel type	PNP	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	0.2 W	0.2 W	0.2 W	0.2 W	0.2 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	180 MHz	180 MHz	180 MHz	180 MHz	180 MHz
Is it lead-free?	Lead free	Lead free	Lead free	Lead free	-
ECCN code	EAR99	EAR99	EAR99	EAR99	-
JESD-609 code	e6	-	e6	e6	e6
Terminal surface	TIN BISMUTH	-	TIN BISMUTH	TIN BISMUTH	TIN BISMUTH
Base Number Matches	1	1	1	1	-

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