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2SB857-B-BP-HF

Description
Power Bipolar Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size282KB,2 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance
Download Datasheet Parametric Compare View All

2SB857-B-BP-HF Overview

Power Bipolar Transistor,

2SB857-B-BP-HF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Code_compli
ECCN codeEAR99
Humidity sensitivity level1
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
MCC
Micro Commercial Components
TM
Features
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
2SB857-B
2SB857-C
2SB857-D
PNP
Silicon
Power Transistors
Maximum Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
C
T
J
T
STG
Halogen
free available upon request by adding suffix "-HF"
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Low Frequency Power Amplifier
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
Junction Temperature
Storage Temperature
Rating
-50
-70
-5
-4
2.0
-55 to +150
-55 to +150
Unit
V
V
V
A
W
TO-220
B
F
Q
T
A
U
1 2
H
3
C
S
Symbol
Parameter
Min
Type
Max
Units
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS
h
FE
Collector-Emitter Breakdown Voltage
(I
C
=-50mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=-10uAdc, I
E
=0)
Emitter-Base Breakdown Voltage
(I
E
=-10uAdc, I
C
=0)
Collector-Base Cutoff Current
(V
CB
=-50Vdc,I
E
=0)
Emitter-Base Cutoff Current
(V
EB
=-5Vdc, I
C
=0)
-50
-70
---
---
---
---
Vdc
Vdc
K
-5
---
---
Vdc
---
---
-1
uAdc
L
G
V
D
N
PIN 1.
PIN 2.
PIN 3.
J
R
BASE
COLLECTOR
EMITTER
---
---
-1
uAdc
V
CE(sat)
V
BE
f
T
Forward Current Transfer ratio
(I
C
=-1Adc, V
CE
=-4Vdc)
Collector-Emitter Saturation Voltage
(I
C
=-2mAdc, I
B
=-200mAdc)
Base-Emitter Voltage
(I
C
=-1Adc,V
CE
=-4Vdc)
Transition frequency
(V
CE
=-4Vdc, I
C
=-500mA)
60
---
---
---
200
-1
---
Vdc
---
---
---
15
-1
---
Vdc
MHz
DIM
A
B
C
D
F
G
H
J
K
L
N
DIMENSIONS
INCHES
MM
MIN
MAX
MIN
MAX
.560
.625
14.22
15.88
.380
.420
9.65
10.67
.140
.190
3.56
4.82
.020
.139
.190
---
.012
.500
.045
.190
.045
.161
.110
.250
.025
.580
.060
.210
0.51
3.53
2.29
---
0.30
12.70
1.14
4.83
1.14
4.09
2.79
6.35
0.64
14.73
1.52
5.33
NOTE
Classification OF h
FE(1)
Rank
Range
B
60-120
C
100-200
D
160-320
Q
R
S
T
U
V
.100
.080
.045
.230
-----
.045
.135
.115
.055
.270
.050
-----
2.54
2.04
1.14
5.84
-----
1.15
3.43
2.92
1.39
6.86
1.27
-----
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex 7.
Revision:
A
www.mccsemi.com
1
of 2
2014/02/18

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Description Power Bipolar Transistor, Power Bipolar Transistor, Power Bipolar Transistor, Power Bipolar Transistor, Power Bipolar Transistor, Power Bipolar Transistor,
Is it Rohs certified? conform to conform to conform to conform to conform to conform to
Reach Compliance Code _compli _compli _compli _compli _compli _compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Humidity sensitivity level 1 1 1 1 1 1
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1 1 1 1 1
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