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2SB1027EHTL

Description
Small Signal Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, UPAK-3
CategoryDiscrete semiconductor    The transistor   
File Size128KB,4 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

2SB1027EHTL Overview

Small Signal Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, UPAK-3

2SB1027EHTL Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)1.5 A
Collector-emitter maximum voltage120 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JESD-30 codeR-PSSO-F3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Base Number Matches1
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