2SA1160B datasheet, PDF - EEWORLD Datasheet

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2SA1160B: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size61KB，1 Pages; ManufacturerTransys Electronics Limited; Websitehttp://www.transyselectronics.com

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2SA1160B Overview

Transistor

2SA1160B Parametric

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	unknow
Base Number Matches	1

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Transys

Electronics

L I M I T E D

TO-92MOD Plastic-Encapsulated Transistors

TO-92MOD

1. EMITTER

2SA1160

FEATURE

Power dissipation

TRANSISTOR (PNP)

2. COLLECTOR

3. BASE

P

CM

: 0.9 W (Tamb=25℃)

Collector current

I

CM:

-2A

Collector-base voltage

V

(BR)CBO

: -20 V

Operating and storage junction temperature range

T

J

, T

stg

: -55℃ to +150℃

123

ELECTRICAL CHARACTERISTICS (Tamb=25℃

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Symbol

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

h

FE(1)

DC current gain

h

FE(2)

Collector-emitter saturation voltage

Transition frequency

Output capacitance

V

CE(sat)

unless otherwise specified)

Test

conditions

MIN

-20

-10

-6

-0.1

140

60

-0.2

140

50

-0.5

V

MHz

pF

600

TYP

MAX

UNIT

V

µA

Ic= -1mA , I

E

=0

I

C

=-10mA , I

B

=0

I

E

= -1mA, I

C

=0

V

CB

= -20 V, I

E

=0

V

EB

= -6 V, I

C

=0

V

CE

=-1V, I

C

= -0.5A

V

CE

=-1V, I

C

= -4A

I

C

= -2A, I

B

=-50mA

V

CE

=-1V, I

C

= -0.5A

V

CE

=-10V, I

E

=0,f=1 MHz

f

T

C

ob

CLASSIFICATION OF h

FE

Rank

Range

A

140-280

B

200-400

C

300-600

2SA1160B Related Products

	2SA1160B	2SA1160C
Description	Transistor	Transistor
Reach Compliance Code	unknow	unknow
Base Number Matches	1	1

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