Transistors
2SB1614
Silicon PNP epitaxial planer type
Unit: mm
For low-frequency amplification
I
Features
•
Large collector power dissipation P
C
•
Low collector to emitter saturation voltage V
CE(sat)
•
Mini power type package, allowing downsizing and thinning of the
equipment and automatic insertion through the tape packing
4.5
±0.1
1.6
±0.2
1.5
±0.1
4.0
+0.25
–0.20
2.5
±0.1
3˚
0.4
±0.04
0.4
±0.08
1.5
±0.1
3˚
1.0
+0.1
–0.2
3
1
2
0.5
±0.08
2.6
±0.1
I
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
*
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Rating
−20
−20
−5
−2.4
−2
1
150
−55
to
+150
Unit
V
V
V
A
A
W
°C
°C
45˚
3.0
±0.15
1: Emitter
2: Collector
3: Base
MiniP3 Type Package
Marking Symbol: 2K
Note) *: Printed circuit board copper foil for collector portion
area: 1.0 Cm
2
or more, thickness: 1.7 mm
I
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
C
ob
f
T
Conditions
V
CB
= −7
V, I
E
=
0
I
C
= −10 µA,
I
E
=
0
I
C
= −1
mA, I
B
=
0
I
E
= −10 µA,
I
C
=
0
V
CE
= −2
V, I
C
=
200 mA
I
C
= −1
A, I
B
= −20
mA
V
CB
= −6
V, I
E
=
0, f
=
1 MHz
V
CB
=
−6
V, I
E
= 50 mA, f = 200 MHz
−20
−20
−5
200
800
−
0.15
−
0.25
68
60
V
pF
MHz
Min
Typ
Max
−
0.1
Unit
µA
V
V
V
0.4 max.
1
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•
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