2N2131 datasheet, PDF - EEWORLD Datasheet

2N2131: DescriptionPower Bipolar Transistor, 30A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-114, Metal, 3 Pin,; CategoryDiscrete semiconductor The transistor; File Size42KB，1 Pages; ManufacturerAPI Technologies; Websitehttp://www.apitech.com/about-api

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2N2131 Overview

Power Bipolar Transistor, 30A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-114, Metal, 3 Pin,

Parameter Name	Attribute value
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	30 A
Collector-emitter maximum voltage	100 V
Configuration	SINGLE
Minimum DC current gain (hFE)	10
JEDEC-95 code	TO-114
JESD-30 code	O-MUPM-D3
Number of components	1
Number of terminals	3
Maximum operating temperature	175 °C
Package body material	METAL
Package shape	ROUND
Package form	POST/STUD MOUNT
Polarity/channel type	NPN
Maximum power consumption environment	250 W
Maximum power dissipation(Abs)	250 W
Certification status	Not Qualified
surface mount	NO
Terminal form	SOLDER LUG
Terminal location	UPPER
Transistor component materials	SILICON
VCEsat-Max	1.3 V
Base Number Matches	1

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