Ordering number:ENN2540A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1216/2SD1816
High-Current Switching Applications
Applications
· Suitable for relay drivers, high-speed inverters,
converters, and other general high-current switching
applications.
Package Dimensions
unit:mm
2045B
[2SB1216/2SD1816]
6.5
5.0
4
1.5
Features
· Low collector-to-emitter saturation voltage.
· Good linearity of h
FE
.
· Small and slim package facilitating compactness of
sets.
· High f
T
.
· Fast switching time.
2.3
0.5
0.85
0.7
0.8
1.6
5.5
7.0
1.2
7.5
0.6
1
2
3
0.5
2.3
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
unit:mm
2044B
[2SB1216/2SD1816]
6.5
5.0
4
2.3
1.5
0.5
5.5
7.0
0.85
1
0.6
0.5
0.8
2
3
2.5
1.2
0 to 0.2
1.2
2.3
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2503TN (KT)/92098HA (KT)/8229MO/4087TA, TS No.2540–1/5
2SB1216/2SD1816
( ) : 2SB1216
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25˚C
Conditions
Ratings
(–)120
(–)100
(–)6
(–)4
(–)8
1
20
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VCB=(–)100V, IE=0
VEB=(–)4V, IC=0
VCE=(–)5V, IC=(–)0.5A
VCE=(–)5V, IC=(–)3A
VCE=(–)10V, IC=(–)0.5A
VCB=(–)10V, f=1MHz
IC=(–)2A, IB=(–)0.2A
70*
40
(130)
180
(65)40
150
(–200)
(–)0.9
(–)120
(–)100
(–)6
100
(800)
900
50
400
(–500)
(–)1.2
MHz
MHz
pF
mV
mV
V
V
V
V
ns
ns
ns
ns
Conditions
Ratings
min
typ
max
(–)1
(–)1
400*
Unit
µA
µA
VBE(sat) IC=(–)2A, IB=(–)0.2A
V(BR)CBO IC=(–)10µA, IE=0
V(BR)CEO IC=(–)1mA, RBE=∞
V(BR)EBO
ton
tstg
tf
IE=(–)10µA, IC=0
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
* : The 2SB1216/2SD1816 are classified by 0.5A h
FE
as follows :
Rank
hFE
Q
70 to 140
R
100 to 200
S
140 to 280
T
200 to 400
Switching Time Test Circuit
PW=20µs
D.C.≤1%
INPUT
IB1
OUTPUT
IB2
VR
50Ω
+
100µF
VBE= --5V
+
470µF
VCC=50V
RB
IC=10IB1= --10IB2=2A
(For PNP, minus sign is omitted.)
No.2540–2/5
2SB1216/2SD1816
--5
IC -- VCE
2SB1216
From top
--100mA
--90mA
--80mA
--70mA
--60mA
--50mA
5
IC -- VCE
2SD1816
70mA
60mA
50mA
40mA
90mA
80mA
100m
A
Collector Current, IC – A
--4
Collector Current, IC – A
A
--40m
--30mA
--20mA
4
A
30m
20mA
--3
3
10mA
2
--2
--10mA
--1
5mA
1
--5mA
0
0
--1
--2
--3
--2mA
IB=0
--4
--5
ITR09250
2mA
0
0
1
2
3
4
IB=0
5
ITR09251
Collector-to-Emitter Voltage, VCE – V
--2.0
Collector-to-Emitter Voltage, VCE – V
2.0
IC -- VCE
2SB1216
A
--10m
--9mA
--8mA
--7mA
--6mA
--5mA
--4mA
IC -- VCE
8mA
2SD1816
Collector Current, IC – A
Collector Current, IC – A
--1.6
1.6
7mA
6mA
--1.2
1.2
5mA
4mA
0.8
--0.8
3mA
--3mA
--2mA
--0.4
2mA
0.4
--1mA
0
0
--10
--20
--30
1mA
0
--50
ITR09252
5
0
10
20
IB=0
--40
IB=0
30
40
50
ITR09253
Collector-to-Emitter Voltage, VCE – V
--5
Collector-to-Emitter Voltage, VCE – V
IC -- VBE
2SB1216
VCE= --5V
Collector Current, IC – A
IC -- VBE
2SD1816
VCE=5V
Collector Current, IC – A
--4
4
--3
3
--2
2
--1
Ta=7
5
°
C
25
°
C
--25
°
C
1
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
ITR09254
0
0
0.2
0.4
0.6
0.8
1.0
1.2
ITR09255
Base-to-Emitter Voltage, VBE – V
1000
7
5
3
Base-to-Emitter Voltage, VBE – V
1000
hFE -- IC
2SB1216
VCE= --5V
hFE -- IC
2SD1816
VCE=5V
Ta=75°C
25°C
--25°C
7
5
3
DC Current Gain, hFE
DC Current Gain, hFE
Ta=75°C
25
°C
2
100
7
5
3
2
10
7
5
5
--0.01
2
--25
°C
2
100
7
5
3
2
10
7
5
3
5
--0.1
2
3
5
--1.0
2
3
Collector Current, IC – A
--10
ITR09256
5
5
0.01
2
3
5
0.1
2
Ta=7
5
°
C
25
°
C
--25
°
C
3
5
2
1.0
3
Collector Current, IC – A
10
ITR09257
5
No.2540–3/5
2SB1216/2SD1816
5
f T -- IC
2SB1216 /
2SD1816
VCE=10V
2SD1816
2SB1216
3
2
Cob -- VCB
2SB1216 /
2SD1816
f=1MHz
Gain-Bandwidth Product, fT – MHz
2
Output Capacitance, Cob -- pF
3
100
7
5
3
2
2SB
100
7
5
2SD
121
6
181
6
3
2
10
7
5
10
2
3
5
7
0.1
(For PNP, minus sign is omitted.)
2
3
5
7 1.0
2
3
5
(For PNP, minus sign is omitted.)
5
7 1.0
2
3
5
7
10
2
3
5
Collector Current, IC – A
5
3
ITR09258
Collector-to-Base Voltage, VCB -- V
5
3
7 100
2
ITR09259
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE (sat) – mV
2SB1216
IC / IB=10
VCE(sat) -- IC
2SD1816
IC / IB=10
Collector-to-Emitter
Saturation Voltage, VCE (sat) – mV
2
--1000
5
3
2
--100
5
3
2
--10
5
--0.01
2
3
5
2
3
5
2
3
5
2
1000
7
5
3
2
100
7
5
3
2
10
25
°
C
Ta=75
°
C
--
C
25
°
25
°
C
Ta=75°C
--25°C
5
0.01
2
3
5
Collector Current, IC – A
--0.1
--1.0
--10
ITR09260
10
7
Collector Current, IC – A
0.1
2
3
5
1.0
2
3
10
ITR09261
5
--10
7
VBE(sat) -- IC
2SB1216
IC / IB=10
VBE(sat) -- IC
2SD1816
IC / IB=10
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
5
3
2
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
5
3
2
--1.0
7
5
3
2
5
Ta= --25°C
75
°C
25°C
1.0
7
5
3
2
25°C
Ta= --25°C
75
°
C
--0.01 2
3
5
--0.1
2
3
5
--1.0
2
3
Collector Current, IC – A
10
5
--10
ITR09262
25
5
5
0.01
2
3
5
Collector Current, IC – A
0.1
2
3
5
1.0
2
3
10
ITR09263
5
ASO
ICP=8A
IC=4A
PC -- Ta
Collector Dissipation, P
C
– W
Collector Current, IC – A
3
2
1.0
5
3
2
0.1
5
3
2
20
1m
s
10
DC
DC
ms
op
era
op
tio
era
tio
n(
Ta
=
25
°
C
)
100
ms
Tc
=2
C)
5
°
15
n(
10
0.01
5
2
Tc=25°C
Single pulse
(For PNP, minus sign is omitted.)
2SB1216 / 2SD1816
3
5
5
1
0
2
3
5
2
100
ITR09264
0
20
No heat sink
40
60
80
100
120
140 150 160
ITR09265
Collector-to-Emitter Voltage, VCE – V
1.0
2
3
5
10
Ambient Temperature, Ta – ˚C
No.2540–4/5
2SB1216/2SD1816
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 2003. Specifications and information herein are subject
to change without notice.
PS No.2540–5/5
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