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2SB1216S(TP)

Description
TRANSISTOR,BJT,PNP,100V V(BR)CEO,4A I(C),TO-251VAR
CategoryDiscrete semiconductor    The transistor   
File Size46KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric Compare View All

2SB1216S(TP) Overview

TRANSISTOR,BJT,PNP,100V V(BR)CEO,4A I(C),TO-251VAR

2SB1216S(TP) Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codecompli
Maximum collector current (IC)4 A
ConfigurationSingle
Minimum DC current gain (hFE)140
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)20 W
surface mountNO
Base Number Matches1
Ordering number:ENN2540A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1216/2SD1816
High-Current Switching Applications
Applications
· Suitable for relay drivers, high-speed inverters,
converters, and other general high-current switching
applications.
Package Dimensions
unit:mm
2045B
[2SB1216/2SD1816]
6.5
5.0
4
1.5
Features
· Low collector-to-emitter saturation voltage.
· Good linearity of h
FE
.
· Small and slim package facilitating compactness of
sets.
· High f
T
.
· Fast switching time.
2.3
0.5
0.85
0.7
0.8
1.6
5.5
7.0
1.2
7.5
0.6
1
2
3
0.5
2.3
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
unit:mm
2044B
[2SB1216/2SD1816]
6.5
5.0
4
2.3
1.5
0.5
5.5
7.0
0.85
1
0.6
0.5
0.8
2
3
2.5
1.2
0 to 0.2
1.2
2.3
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2503TN (KT)/92098HA (KT)/8229MO/4087TA, TS No.2540–1/5

2SB1216S(TP) Related Products

2SB1216S(TP) 2SB1216Q(TP) 2SB1216Q(TP-FA) 2SB1216R(TP-FA) 2SB1216R(TP) 2SB1216S(TP-FA) 2SD1816T(TP-FA) 2SD1816R(TP) 2SD1816R(TP-FA)
Description TRANSISTOR,BJT,PNP,100V V(BR)CEO,4A I(C),TO-251VAR TRANSISTOR,BJT,PNP,100V V(BR)CEO,4A I(C),TO-251VAR TRANSISTOR,BJT,PNP,100V V(BR)CEO,4A I(C),TO-252VAR TRANSISTOR,BJT,PNP,100V V(BR)CEO,4A I(C),TO-252VAR TRANSISTOR,BJT,PNP,100V V(BR)CEO,4A I(C),TO-251VAR TRANSISTOR,BJT,PNP,100V V(BR)CEO,4A I(C),TO-252VAR TRANSISTOR,BJT,NPN,100V V(BR)CEO,4A I(C),TO-252VAR TRANSISTOR,BJT,NPN,100V V(BR)CEO,4A I(C),TO-251VAR TRANSISTOR,BJT,NPN,100V V(BR)CEO,4A I(C),TO-252VAR
Reach Compliance Code compli compli compli compli compli compli compli compli compli
Maximum collector current (IC) 4 A 4 A 4 A 4 A 4 A 4 A 4 A 4 A 4 A
Configuration Single Single Single Single Single Single Single Single Single
Minimum DC current gain (hFE) 140 70 70 100 100 140 200 100 100
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Polarity/channel type PNP PNP PNP PNP PNP PNP NPN NPN NPN
Maximum power dissipation(Abs) 20 W 20 W 20 W 20 W 20 W 20 W 20 W 20 W 20 W
surface mount NO NO YES YES NO YES YES NO YES
Base Number Matches 1 1 1 1 1 1 1 1 1
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