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2N1386

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size384KB,5 Pages
ManufacturerAdvanced Semiconductor, Inc.
Download Datasheet Parametric View All

2N1386 Overview

Transistor

2N1386 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)0.05 A
ConfigurationSingle
Minimum DC current gain (hFE)30
Maximum operating temperature175 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
surface mountNO
Base Number Matches1
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