2SA1162GR datasheet, PDF - EEWORLD Datasheet

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2SA1162GR: Description150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size73KB，2 Pages; ManufacturerMicro Commercial Components (MCC)

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2SA1162GR Overview

150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3

2SA1162GR Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	compli
Maximum collector current (IC)	0.15 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	200
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	240
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	30
Transistor component materials	SILICON
Nominal transition frequency (fT)	80 MHz
Base Number Matches	1

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MCC

Micro Commercial Components

TM

omponents

20736 Marilla

Street Chatsworth

!"#

$ % !"#

2SA1162

Features

•

Capable of 0.15Watts of Power Dissipation.

Collector-current: 0.15A

Collector-base Voltage: -50V

Operating and storage junction temperature range: -55

to +150

Case Material: Molded Plastic.

Classification Rating 94V-0

UL Flammability

PNP Silicon

Plastic-Encapsulate

Transistor

SOT-23

A

D

C

Electrical Characteristics @ 25

O

C Unless Otherwise Specified

Symbol

Parameter

Collector-Emitter Breakdown Voltage

(I

C

=-1mAdc, I

B

=0)

Collector-Base Breakdown Voltage

(I

C

=-100uAdc, I

E

=0)

Emitter-Base Breakdown Voltage

(I

E

=-100uAdc, I

C

=0)

Collector Cutoff Current

(V

CB

=-50Vdc, I

E

=0)

Emitter Cutoff Current

(V

EB

=-5.0Vdc, I

C

=0)

DC Current Gain

(I

C

=-2.0mAdc, V

CE

=-6.0Vdc)

Collector-Emitter Saturation Voltage

(I

C

=-100mAdc, I

B

=-10mAdc)

Transistor Frequency

(I

C

=-1.0mAdc, V

CE

=-10Vdcz)

Collector Output Capacitance

(V

CB

=-10Vdc, I

E

=0, f=1MHz)

Noise Figure

(V

CE

=-6Vdc, I

C

=0.1mA, f=1KHz, R

g

=10K¡)

Rank

Range

Marking

O

70-140

SO

Y

120-240

SY

Min

-50

-5

---

Max

---

-0.1

Units

Vdc

uAdc

K

G

C

B

OFF CHARACTERISTICS

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CBO

I

EBO

F

E

B

E

H

J

uAdc

INCHES

MIN

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

DIMENSIONS

MM

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

.085

.37

ON CHARACTERISTICS

h

FE

V

CE(sat)

70

---

400

-0.3

---

Vdc

SMALL-SIGNAL CHARACTERISTICS

f

T

Cob

NF

80

---

7

10

MHz

pF

dB

DIM

A

B

C

D

E

F

G

H

J

K

MAX

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

NOTE

Suggested Solder

Pad Layout

.031

.800

.035

.900

.079

2.000

inches

mm

CLASSIFICATION OF H

FE (1)

GR

200-400

SG

.037

.950

.037

.950

www.mccsemi.com

1 of 2

Revision: 3

2006/06/22

2SA1162GR Related Products

	2SA1162GR	2SA1162O	2SA1162Y
Description	150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3	150mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3	150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3
Is it Rohs certified?	incompatible	incompatible	incompatible
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	3
Reach Compliance Code	compli	compli	compli
Maximum collector current (IC)	0.15 A	0.15 A	0.15 A
Collector-emitter maximum voltage	50 V	50 V	50 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	200	70	120
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e0	e0	e0
Number of components	1	1	1
Number of terminals	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	240	240	240
Polarity/channel type	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	30	30	30
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	80 MHz	80 MHz	80 MHz
Base Number Matches	1	1	1

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