2SA812M6 datasheet, PDF - EEWORLD Datasheet

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2SA812M6: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size75KB，2 Pages; ManufacturerMicro Commercial Components (MCC)

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2SA812M6 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN

2SA812M6 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	200
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	240
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	30
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	180 MHz
Base Number Matches	1

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MCC

Micro Commercial Components

omponents

20736 Marilla

Street Chatsworth

!"#

$ % !"#

2SA812

Features

High DC Current Gain:90

High voltage: V

CEO

=-50V

600.(V

=-6.0V, I

=-1mA)

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

and MSL Rating 1

PNP

Silicon

Epitaxial Transistors

SOT-23

Maximum Ratings

Symbol

CEO

CBO

EBO

STG

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Collector power dissipation

Junction Temperature

Storage Temperature

Rating

-50

-60

-5.0

-100

200

-55 to +150

Unit

Electrical Characteristics @ 25 C Unless Otherwise Specified

Symbol

Parameter

Collector Cutoff Current

=-60Vdc,I

=0)

Emitter Cutoff Current

=-5.0Vdc, I

=0)

DC Current Gain*

=-1.0mAdc, V

=-6.0Vdc)

Collector Saturation Voltage*

=-100mAdc, I

=-10mAdc)

Base Emitter Voltage*

=-6.0Vdc, I

=-1.0mAdc)

Gain Bandwidth product

=-6.0Vdc, I

=-10mAdc)

Min

---

Typ

---

Max

-0.1

Units

uAdc

OFF CHARACTERISTICS

CBO

EBO

DIMENSIONS

ON CHARACTERISTICS

CE(sat)

---

180

---

600

-0.3

-0.68

---

Vdc

MHz

DIM

INCHES

MIN

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

MAX

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

.085

.37

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

NOTE

CLASSIFICATION OF h

Marking

Range

90-180

135-270

200-400

300-600

.035

.900

Suggested Solder

Pad Layout

.031

.800

.079

2.000

inches

.037

.950

.037

.950

www.mccsemi.com

Revision: 3

1 of 2

2008/01/01

2SA812M6 Related Products

	2SA812M6	2SA812M5	2SA812M7	2SA812-TP	2SA812P	2SA812M4	2SA812
Description	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3, BIP General Purpose Small Signal	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
Is it Rohs certified?	incompatible	incompatible	incompatible	conform to	conform to	incompatible	incompatible
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	PLASTIC PACKAGE-3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	3	3	3	3	3
Reach Compliance Code	compli	compli	compli	compli	unknow	compliant	compli
Parts packaging code	SOT-23	SOT-23	SOT-23	-	-	SOT-23	-
ECCN code	EAR99	EAR99	EAR99	EAR99	-	EAR99	EAR99
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	-	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V	-	50 V	50 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	-	SINGLE	SINGLE
Minimum DC current gain (hFE)	200	135	300	90	-	90	90
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	-	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e0	e0	e0	e3	-	e0	e0
Number of components	1	1	1	1	-	1	1
Number of terminals	3	3	3	3	-	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	240	240	240	260	-	240	240
Polarity/channel type	NPN	NPN	NPN	PNP	-	NPN	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	-	YES	YES
Terminal surface	TIN LEAD	Tin/Lead (Sn/Pb)	TIN LEAD	Matte Tin (Sn)	-	Tin/Lead (Sn/Pb)	TIN LEAD
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	-	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	-	DUAL	DUAL
Maximum time at peak reflow temperature	30	30	30	10	-	30	30
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	-	-	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	-	SILICON	SILICON
Nominal transition frequency (fT)	180 MHz	180 MHz	180 MHz	180 MHz	-	180 MHz	180 MHz
Base Number Matches	1	1	1	1	1	1	-

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