Ordering number:ENN3520
PNP Epitaxial Planar Silicon Transistors
NPN Triple Diffused Planar Silicon Transistors
2SA1784/2SC4644
High Voltage Driver Applications
Features
· Adoption of MBIT process.
· High breakdown voltage (V
CEO
≥400V).
· Excellent linearity of h
FE
.
Package Dimensions
unit:mm
2064A
[2SA1784/2SC4644]
2.5
1.45
6.9
1.0
4.5
1.0
0.6
1.0
0.9
1
2
3
0.5
0.45
( ) : 2SA1784
2.54
2.54
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Colletor Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
1 : Emitter
2 : Collector
3 : Base
SANYO : NMP
Ratings
(–)400
(–)400
(–)5
(–)200
(–)400
1
150
–55 to +150
4.0
1.0
Unit
V
V
V
mA
mA
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Symbol
ICBO
IEBO
hFE
fT
Cob
Cre
VCB=(–)300V, IE=0
VEB=(–)4V, IC=0
VCE=(–)10V, IC=(–)50mA
VCE=(–)30V, IC=(–)10mA
VCB=(–)30V, f=1MHz
VCB=(–)30V, f=1MHz
E
100 to 200
Conditions
Ratings
min
typ
max
(–)0.1
(–)0.1
60*
70
(5)4
(4)3
200*
Unit
µA
µA
MHz
pF
pF
* : The 2SA1784/2SC4644 are classified by 50mA h
FE
as follows :
Rank
hFE
D
60 to 120
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
93003TN (KT)/83198HA (KT)/5170TA (KOTO) No.3520–1/4
2SA1784/2SC4644
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Turn-OFF Time
Symbol
VCE(sat)
VBE(sat)
Conditions
IC=(–)50mA, IB=(–)5mA
IC=(–)50mA, IB=(–)5mA
(–)400
(–)400
(–)5
0.25
5.0
Ratings
min
typ
max
(–0.8)
0.6
(–)1.0
Unit
V
V
V
V
V
V
µs
µs
V(BR)CBO IC=(–)10µA, IE=0
V(BR)CEO IC=(–)1mA, RBE=∞
V(BR)EBO
ton
toff
IE=(–)10µA, IC=0
See specified Test Circuit
See specified Test Circuit
Switching Time Test Circuit
PW=20µs
D.C.≤1%
INPUT
IB1
IB2
RB
VR
50Ω
+
100µF
VBE=--1V
+
470µF
VCE=150V
OUTPUT
RL
10IB1= --10IB2= IC=50mA
RL=3kΩ, RB=200Ω, at IC=50mA
For PNP, the polarity is reversed.
--120
IC -- VBE
2SA1784
VCE=--10V
120
IC -- VBE
2SC4644
VCE=10V
--100
100
Collector Current, IC – mA
--80
Collector Current, IC – mA
80
--60
60
Ta=70
°
C
--40
40
--20
20
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
0
0
0.2
0.4
Ta=70
°
C
25
°C
--30
°C
0.6
0.8
25
°
C
--30
°C
1.0
1.2
1.4
Base-to-Emitter Voltage, VBE – V
5
3
2
ITR04653
5
hFE -- IC
Base-to-Emitter Voltage, VBE – V
ITR04654
hFE -- IC
Ta=70°C
25°C
--30°C
2SA1784
VCE=--10V
Ta=70°C
DC Current Gain, hFE
3
2
2SC4644
VCE=10V
DC Current Gain, hFE
100
7
5
3
2
25°C
--30°C
100
7
5
3
2
10
7
5
7 --1.0
2
3
5
7 --10
2
3
5
7 --100
2
3
10
7
5
7 1.0
2
3
5
7 10
2
3
5
7 100
2
3
Collector Current, IC – mA
ITR04655
Collector Current, IC – mA
ITR04656
No.3520–2/4
2SA1784/2SC4644
5
3
VCE(sat) -- IC
2SA1784
IC / IB=10
5
3
VCE(sat) -- IC
2SC4644
IC / IB=10
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
2
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
2
--1.0
7
5
3
2
1.0
7
5
3
2
25
°
C
--0.1
7
5
7 --1.0
2
Ta=70
°C
--30
°C
3
5
7 --10
2
3
5
0.1
7
5
Ta=70
°
C
°
C
,
--30
25
°
C
7 1.0
2
3
5
7
10
2
3
5
Collector Current, IC – mA
7
5
7 --100
2
ITR04657
7
5
VBE(sat) -- IC
Collector Current, IC – mA
7 100
2
ITR04658
VBE(sat) -- IC
2SA1784
IC / IB=10
2SC4644
IC / IB=10
Base-to-Emitter
Saturation Voltage, VBE (sat) –V
3
2
Base-to-Emitter
Saturation Voltage, VBE (sat) –V
3
2
--1.0
7
5
Ta=--30°C
1.0
Ta=--30°C
7
5
70
°C
25°C
70
°C
25°C
3
7 --1.0
2
3
5
7 --10
2
3
5
7 --100
2
3
3
7 1.0
2
3
5
7 10
2
3
5
7 100
2
3
Collector Current, IC – mA
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
5
7
--10
2
3
5
7 --100
2
ITR04659
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
5
3
5
7
SW Time -- IC
ts
tg
Collector Current, IC – mA
ITR04660
SW Time -- IC
tst
g
Switching Time, SW Time --
µs
Switching Time, SW Time --
µs
2SA1784
VCC=--150V
10IB1=--10IB2=IC
2SC4644
VCC=--150V
10IB1=--10IB2=IC
tf
to
n
tf
to
n
10
2
3
5
7
100
2
3
5
Collector Current, IC – mA
--1000
5
ITR04661
1000
5
Collector Current, IC – mA
ITR04662
ASO
2SA1784
ICP=–400mA
IC=–200mA
s
1m
ms
ms
10
100
ASO
2SC4644
ICP=400mA
IC=200mA
s
1m
s
s
m
m
10
100
Collector Current, IC – mA
Collector Current, IC – mA
2
2
100
5
--100
5
DC
op
DC
era
op
2
--10
5
tio
n
2
10
5
era
tio
n
2
--1.0
Ta=25°C
Single pulse
2
3
5
7 --10
2
3
5
7 --100
2
3
5
2
1.0
ITR04663
Ta=25°C
Single pulse
2
3
5
7
10
2
3
5
7
100
2
3
5
Collector-to-Emitter Voltage, VCE – V
Collector-to-Emitter Voltage, VCE – V
ITR04664
No.3520–3/4
2SA1784/2SC4644
1.2
PC -- Ta
2SA1784 / 2SC4644
1.0
Collector Dissipation, P
C
– W
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta – ˚C
ITR04665
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of September, 2003. Specifications and information herein are
subject to change without notice.
PS No.3520–4/4
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