Inchange Semiconductor
Product Specification
Silicon PNP Darlington Power Transistors
2SB1255
DESCRIPTION
・With
TO-3PFa package
・Optimum
for 90W Hi-Fi output
・High
foward current transfer ratio h
FE
・Low
collector-emitter saturation voltage
・Complement
to type 2SD1895
APPLICATIONS
・Power
amplification
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
PARAMETER
固电
IN
导½
半
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
ANG
CH
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
UCT
ND
O
VALUE
-160
-140
-8
-15
-12
UNIT
V
V
V
A
A
Collector current-peak
T
C
=25℃
100
W
3
P
C
Collector power dissipation
T
j
T
stg
Junction temperature
Storage temperature
150
-55~150
℃
℃
Inchange Semiconductor
Product Specification
Silicon PNP Darlington Power Transistors
2SB1255
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO
V
CEsat
V
BEsat
I
CBO
I
CEO
I
EBO
h
FE-1
h
FE -2
f
T
PARAMETER
Collector-emitter voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=-30mA ; I
B
=0
I
C
=-7A ;I
B
=-7mA
I
C
=-7A ;I
B
=-7mA
V
CB
=-160V; I
E
=0
V
CE
=-140V; I
B
=0
V
EB
=-5V; I
C
=0
I
C
=-1A ; V
CE
=-5V
I
C
=-7A ; V
CE
=-5V
I
C
=0.5A ; V
CE
=-10V;f=1MHz
2000
5000
30000
MIN
-140
-2.5
-3.0
-100
-100
-100
TYP.
MAX
UNIT
V
V
V
μA
μA
μA
Switching times
t
on
t
stg
t
f
固电
IN
Q
Transition frequency
导½
半
Turn-on time
Storage time
Fall time
ANG
CH
P
8000-30000
MIC
E SE
I
C
=-7A; V
CC
=-50V
I
B1
=-I
B2
=-7mA
DUC
ON
20
1.0
1.5
1.2
OR
T
MHz
μs
μs
μs
h
FE-2
classifications
5000-15000
2
Inchange Semiconductor
Product Specification
Silicon PNP Darlington Power Transistors
PACKAGE OUTLINE
2SB1255
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
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