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2SC1815-GR-BP-HF

Description
Small Signal Bipolar Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size404KB,3 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance
Download Datasheet Parametric View All

2SC1815-GR-BP-HF Overview

Small Signal Bipolar Transistor,

2SC1815-GR-BP-HF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instruction,
Reach Compliance Codecompli
ECCN codeEAR99
Humidity sensitivity level1
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
2SC1815-O
2SC1815-Y
2SC1815-GR
2SC1815-BL
NPN Silicon
Epitaxial Transistor
TO-92
A
E
Features
Halogen
free available upon request by adding suffix "-HF"
2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF
Amplifier and General Purpose Applications.
Capable of 0.4Watts of Power Dissipation.
Collector-current 0.15A
Collector-base Voltage 60V
Marking : C1815
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS
Compliant. See ordering information)
Operating and storage junction temperature range:-55
o
C to +125
o
C
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
Collector-Emitter Breakdown Voltage
(I
C
=0.1mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=100uAdc, I
E
=0)
Emitter-Base
Breakdown
Voltage
(I
E
=100uAdc,I
C
=0)
Collector Cutoff Current
(V
CB
=60Vdc, I
E
=0Adc)
Collector Cutoff Current
(V
CB
=50Vdc, I
E
=0Adc)
Emitter Cutoff Current
(V
EB
=5.0Vdc, I
C
=0Adc)
DC Current Gain*
(I
C
=2.0mAdc, V
CE
=6.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=100mAdc, I
B
=10mAdc)
Base-Emitter Saturation Voltage
(I
C
=100mAdc, I
B
=10mAdc)
Base-Emitter Voltage
(I
E
=310mAdc)
Transistor Frequency
(I
C
=1.0mAdc, V
CE
=10Vdc, f=30MHz)
Min
50
60
5
0.1
0.1
0.1
Max
Units
Vdc
Vdc
Vdc
uAdc
uAdc
uAdc
C
B
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
ON CHARACTERISTICS
h
FE(1)
V
CE(sat)
V
BE(sat)
V
BE
D
70
700
0.25
1.0
1.45
Vdc
Vdc
Vdc
G
E
E
C
B
C
B
---
SMALL-SIGNAL CHARACTERISTICS
f
T
80
MHz
INCHES
MIN
.175
.175
.500
.016
.135
.095
.173
STRAIGHT LEAD BENT LEAD
BULK PACK
AMMO PACK
DIMENSIONS
MM
MAX
.185
.185
---
.020
.145
.105
.220
MIN
4.45
4.45
12.70
0.41
3.43
2.42
4.40
MAX
4.70
4.70
---
0.63
3.68
2.67
5.60
NOTE
C
OB
NF
Collector Output Capacitance
(V
CB
=10Vdc, I
E
=0,f=1MHz)
Noise Figure
(V
CE
=6Vdc, I
C
=0.1mAdc,f=1KHz,Rg=10K)
O
70-140
Y
120-240
---
---
3.5
10
pF
dB
CLASSIFICATION OF H
FE (1)
Rank
Range
GR
200-400
BL
350-700
DIM
A
B
C
D
E
G
Straight Lead
Bent Lead
* For ammo packing detailed specification, click here to visit our website
of product packaging for details.
www.mccsemi.com
Revision: G
1 of
3
2013/01/01
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