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2SA817A-O(TPE6,F)

Description
TRANSISTOR,BJT,PNP,80V V(BR)CEO,400MA I(C),TO-92VAR
CategoryDiscrete semiconductor    The transistor   
File Size120KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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2SA817A-O(TPE6,F) Overview

TRANSISTOR,BJT,PNP,80V V(BR)CEO,400MA I(C),TO-92VAR

2SA817A-O(TPE6,F) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)0.4 A
ConfigurationSingle
Minimum DC current gain (hFE)70
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.8 W
surface mountNO
Base Number Matches1
2SA817A
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA817A
Driver-Stage Amplifier Applications
Voltage Amplifier Applications
Unit: mm
Complementary to 2SC1627A.
Driver stage application of 30 to 35 watts amplifiers.
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
−80
−80
−5
−400
-40
800
150
−55
to 150
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
TO-92MOD
Note1: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-5J1A
temperature/current/voltage and the significant change in
Weight: 0.36 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2009-12-21

2SA817A-O(TPE6,F) Related Products

2SA817A-O(TPE6,F) 2SA817A-Y(TPE6)
Description TRANSISTOR,BJT,PNP,80V V(BR)CEO,400MA I(C),TO-92VAR TRANSISTOR,BJT,PNP,80V V(BR)CEO,400MA I(C),TO-92VAR
Is it Rohs certified? conform to incompatible
Reach Compliance Code unknow unknow
Maximum collector current (IC) 0.4 A 0.4 A
Configuration Single Single
Minimum DC current gain (hFE) 70 120
Maximum operating temperature 150 °C 150 °C
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 0.8 W 0.8 W
surface mount NO NO
Base Number Matches 1 1

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