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30KP130C

Description
Trans Voltage Suppressor Diode, 30000W, 130V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size177KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

30KP130C Overview

Trans Voltage Suppressor Diode, 30000W, 130V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC PACKAGE-2

30KP130C Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicrosemi
package instructionPLASTIC PACKAGE-2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum breakdown voltage176 V
Minimum breakdown voltage144 V
Breakdown voltage nominal value160 V
Shell connectionISOLATED
Maximum clamping voltage231 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-PALF-W2
JESD-609 codee0
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation30000 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityBIDIRECTIONAL
Maximum power dissipation1.61 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage130 V
surface mountNO
technologyAVALANCHE
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
30KP33 thru 30KP400A
30kW Transient Voltage Suppressor
SCOTTSDALE DIVISION
DESCRIPTION
These Microsemi 30 kW Transient Voltage Suppressors (TVSs) are
designed for applications requiring protection of voltage-sensitive electronic
devices that may be damaged by harsh or severe voltage transients
including lightning per IEC61000-4-5 and class levels with various source
impedances described herein. This series is available in 33 to 400 volt
standoff voltages (V
WM
) in both unidirectional and bi-directional with either
5% or 10% tolerances of the Breakdown Voltage (V
BR
). Microsemi also
offers numerous other TVS products to meet higher or lower power
demands and special applications
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
FEATURES
Available in both Unidirectional and Bidirectional
construction (Bidirectional with C or CA suffix)
Selections for 33 to 400 volt standoff voltages V
WM
Suppresses transients up to 30 kW @ 10/1000 µs
and 200 kW @ 8/20 µs (see Figure 1)
Fast response
Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, JANTXV, and JANS are
available by adding MQ, MX, MV, or MSP prefixes
respectively to part numbers.
Moisture classification is Level 1 with no dry pack
required per IPC/JEDEC J-STD-020B
APPLICATIONS / BENEFITS
Protection from switching transients and induced RF
Protection from ESD, and EFT per IEC 61000-4-2 and
IEC 61000-4-4
Secondary lightning protection per IEC61000-4-5 with
42 Ohms source impedance:
Class 1,2,3,4: 30KP33A - 30KP400A or CA
Class 5: 30KP33A - 30KP400A or CA (short distance)
Class 5: 30KP33A - 30KP220A or CA (long distance)
Secondary lightning protection per IEC61000-4-5 with
12 Ohms source impedance:
Class 1,2, 3: 30KP33A to 30KP400A or CA
Class 4: 30KP33A to 30KP220A or CA
Secondary lightning protection per IEC61000-4-5 with
2 Ohms source impedance:
Class 2: 30KP33A to 30KP400A or CA
Class 3: 30KP33 to 30KP220A or CA
Class 4: 30KP33 to 30KP110A or CA
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25
º
C: 30,000
watts at 10/1000
µs
(also see Figures 1 and 2)
Impulse repetition rate (duty factor): 0.05%
t
clamping
(0 volts to V
(BR)
min.): < 100 ps theoretical
for unidirectional and < 5 ns for bidirectional
Operating & Storage temperature: -65
º
C to +150
º
C
Thermal resistance: 17.5
º
C/W junction to lead, or
77.5
º
C/W junction to ambient when mounted on
FR4 PC board with 4 mm
2
copper pads (1oz) and
track width 1 mm, length 25 mm
Steady-State Power dissipation: 7 watts at T
L
=
27.5
o
C, or 1.61 watts at T
A
= 25
º
C when mounted
on FR4 PC board described for thermal resistance
Forward Surge: 250 Amps 8.3 ms half-sine wave
Solder temperatures: 260
º
C for 10 s (maximum)
MECHANICAL AND PACKAGING
CASE: Void-free transfer molded thermosetting
epoxy body meeting UL94V-0
FINISH: Tin-Lead plated readily solderable per MIL-
STD-750, method 2026
MARKING: Body marked with part number
POLARITY: Band denotes cathode. Bidirectional not
marked for polarity
WEIGHT: 1.8 grams.
TAPE & REEL option: Standard per EIA-296 for axial
package (add “TR” suffix to part number)
See package dimension on last page
30KP33 – 30KP400A
KP33 – 30KP400A
Copyright
2003
06-24-2003 REV F
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
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