UTC 2SC1815
NPN EPITAXIAL SILICON TRANSISTOR
AUDIO FREQUENCY AMPLIFIER
HIGH FREQUENCY OSC NPN
TRANSISTOR
FEATURES
*Collector-Emitter voltage:
BV
CEO
=50V
*Collector current up to 150mA
* High hFE linearity
*complimentary to 2SA1015
1
TO-92
1:EMITTER 2:COLLECTOR 3. BASE
ABSOLUTE MAXIMUM RATINGS
( Ta=25°C ,unless otherwise specified )
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector dissipation(Ta=25°C
)
Collector current
Base current
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
Pc
Ic
I
B
T
j
T
STG
RATING
60
50
5
400
150
50
125
-55 ~ +150
UNIT
V
V
V
mW
mA
mA
°C
°C
ELECTRICAL CHARACTERISTICS
(Ta=25°C,unless otherwise specified)
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain(note)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Current gain bandwidth product
Output capacitance
Noise Figure
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
f
T
Cob
NF
Test conditions
V
CB
=60V,I
E
=0
V
EB
=5V,Ic=0
V
CE
=6V,Ic=2mA
V
CE
=6V,Ic=150mA
Ic=100mA,I
B
=10mA
Ic=100mA,I
B
=10mA
V
CE
=10V,Ic=50mA
V
CB
=10V,I
E
=0,f=1MHz
Ic=-0.1mA,V
CE
=6V
R
G
=10kΩ,f=100Hz
MIN
TYP
MAX
100
100
700
UNIT
nA
nA
120
25
0.1
80
2.0
1.0
0.25
1.0
3.0
1.0
V
V
MHz
pF
dB
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R201-006,C
UTC 2SC1815
RANK
RANGE
NPN EPITAXIAL SILICON TRANSISTOR
Y
120-240
GR
200-400
BL
350-700
CLASSIFICATION OF hFE1
TYPICAL CHARACTERISTIC CURVES
Fig.1 Static characteristics
100
3
10
Fig.2 DC current Gain
2
10
Fig.3 Base-Emitter on Voltage
Ic,Collector current (mA)
H
FE
, DC current Gain
80
Ic,Collector current (mA)
V
CE
=6V
I
B
=300
µA
60
2
10
1
10
V
CE
=6V
I
B
=250
µA
40
I
B
=200
µA
I
B
=150
µA
1
10
0
10
20
I
B
=100
µA
I
B
=50
µA
0
0
4
8
12
16
20
0
10
-1
10
0
10
1
10
2
10
3
10
-1
10
0
0.2
0.4
0.6
0.8
1.0
Collector-Emitter voltage ( V)
Ic,Collector current (mA)
Base-Emitter voltage (V)
Fig.4 Saturation voltage
4
10
3
10
Fig.5 Current gain-bandwidth
product
2
10
Fig.6 Collector output
Capacitance
Cob,Capacitance (pF)
Saturation voltage (mV)
Ic=10*I
B
Current Gain-bandwidth
product,f
T
(MHz)
V
CE
=6V
2
10
3
10
V
BE
(sat)
1
10
f=1MHz
I
E
=0
2
10
V
CE
(sat)
1
10
0
10
1
10
-1
10
0
10
1
10
2
10
3
10
0
10
-1
10
-1
10
0
10
1
10
2
10
0
10
1
10
2
10
3
10
Ic,Collector current (mA)
Ic,Collector current (mA)
Collector-Base voltage (V)
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R201-006,C
UTC 2SC1815
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO. LTD
3
QW-R201-006,C
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