Transistors
2SB1030, 2SB1030A
Silicon PNP epitaxial planar type
For low-frequency amplification
Complementary to 2SD1423 and 2SD1423A
■
Features
•
Optimum for high-density mounting
•
Allowing supply with the radial taping
Unit: mm
4.0
±0.2
2.0
±0.2
(0.8)
3.0
±0.2
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage
(Emitter open)
2SB1030
2SB1030A
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Symbol
V
CBO
Rating
−30
−60
−25
−50
−7
−
0.5
−1
300
150
−55
to
+150
V
A
A
mW
°C
°C
1
Unit
V
0.45
+0.20
–0.10
(2.5) (2.5)
0.45
+0.20
–0.10
0.7
±0.1
Collector-emitter voltage 2SB1030
(Base open)
2SB1030A
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
V
15.6
±0.5
(0.8)
0.75 max.
7.6
2
3
1: Emitter
2: Collector
3: Base
NS-B1 Package
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
2SB1030
2SB1030A
2SB1030
2SB1030A
V
EBO
I
CBO
I
CEO
h
FE1 *
h
FE2
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
V
CE(sat)
f
T
C
ob
I
E
= −10 µA,
I
C
=
0
V
CB
= −20
V, I
E
=
0
V
CE
= −20
V, I
B
=
0
V
CE
= −10
V, I
C
= −150
mA
V
CE
= −10
V, I
C
= −500
mA
I
C
= −300
mA, I
B
= −30
mA
V
CB
= −10
V, I
E
=
50 mA, f
=
200 MHz
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
85
40
−
0.35
−
0.60
120
3.5
15.0
V
MHz
pF
V
CEO
I
C
= −2
mA, I
B
=
0
Symbol
V
CBO
Conditions
I
C
= −10 µA,
I
E
=
0
Min
−30
−60
−25
−50
−7
−
0.1
−1
340
V
µA
µA
V
Typ
Max
Unit
V
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-Emitter cutoff current (Base open)
Forward current transfer ratio
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
Q
85 to 170
R
120 to 240
S
170 to 340
Publication date: March 2003
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•
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