EEWORLDEEWORLDEEWORLD

Part Number

Search

2SA1785E

Description
TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size92KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
Download Datasheet Parametric Compare View All

2SA1785E Overview

TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

2SA1785E Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Code_compli
Maximum collector current (IC)1 A
ConfigurationSingle
Minimum DC current gain (hFE)100
JESD-609 codee2
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)1 W
surface mountNO
Terminal surfaceTin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)
Nominal transition frequency (fT)50 MHz
Base Number Matches1
Ordering number : ENN3511A
2SA1785/2SC4645
Features
· Large current capacity (I
C
=1A).
· High breakdown voltage (V
CEO
≥400V).
2SA1785 : PNP Epitaxial Planar Silicon Transistor
2SC4645 : NPN Triple Diffused Planar Silicon Transistor
High Voltage Driver Applications
Package Dimensions
unit:mm
2064A
[2SA1785/2SC4645]
2.5
1.45
6.9
1.0
4.5
1.0
0.6
1.0
0.9
1
2
3
0.5
0.45
( ) : 2SA1785
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Colletor Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
2.54
2.54
1 : Emitter
2 : Collector
3 : Base
SANYO : NMP
Ratings
(–)400
(–)400
(–)5
(–)1
(–)2
1
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Symbol
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
Rank
hFE
C
40 to 80
Conditions
VCB=(–)300V, IE=0
VEB=(–)4V, IC=0
VCE=(–)10V, IC=(–)100mA
VCE=(–)10V, IC=(–)50mA
VCB=(–)30V, f=1MHz
IC=(–)200mA, IB=(–)20mA
IC=(–)200mA, IB=(–)20mA
D
60 to 120
E
100 to 200
Ratings
min
typ
max
(–)1.0
(–)1.0
40*
(50)70
(12)8
(–)1.0
(–)1.0
200*
4.0
1.0
Unit
μ
A
μ
A
MHz
pF
V
V
* : The 2SA1785/2SC4465 are classified by 100mA h
FE
as follows :
Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
www.onsemi.com
Publication Order Number:
2SA1785_2SC4645/D

2SA1785E Related Products

2SA1785E 2SA1785C 2SA1785E-AN 2SC4645C 2SC4645D 2SC4645E 2SC4645 2SA1785D 2SA1785
Description TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR,BJT,PNP,400V V(BR)CEO,1A I(C),SIP TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
Reach Compliance Code _compli compli _compli compli compli compli compli compli compli
Base Number Matches 1 1 1 1 1 1 1 1 1

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1405  2092  930  706  2318  29  43  19  15  47 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号