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2SA1425-Y(TPF2)

Description
TRANSISTOR,BJT,PNP,120V V(BR)CEO,800MA I(C),SC-71
CategoryDiscrete semiconductor    The transistor   
File Size131KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SA1425-Y(TPF2) Overview

TRANSISTOR,BJT,PNP,120V V(BR)CEO,800MA I(C),SC-71

2SA1425-Y(TPF2) Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)0.8 A
ConfigurationSingle
Minimum DC current gain (hFE)120
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)1 W
surface mountNO
Base Number Matches1
2SA1425
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1425
Power Amplifier Applications
Driver-Stage Amplifier Applications
Unit: mm
Complementary to 2SC3665.
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
−120
−120
−5
−800
−80
1000
150
−55
to 150
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
Note1: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-7D101A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.2 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-03-10

2SA1425-Y(TPF2) Related Products

2SA1425-Y(TPF2) 2SA1425-O(TPF2,F) 2SA1425-O(TPF2) 2SA1425-Y(TPF2,F)
Description TRANSISTOR,BJT,PNP,120V V(BR)CEO,800MA I(C),SC-71 TRANSISTOR,BJT,PNP,120V V(BR)CEO,800MA I(C),SC-71 TRANSISTOR,BJT,PNP,120V V(BR)CEO,800MA I(C),SC-71 TRANSISTOR,BJT,PNP,120V V(BR)CEO,800MA I(C),SC-71
Is it Rohs certified? incompatible conform to incompatible conform to
Reach Compliance Code unknow unknow unknow unknow
Maximum collector current (IC) 0.8 A 0.8 A 0.8 A 0.8 A
Configuration Single Single Single Single
Minimum DC current gain (hFE) 120 80 80 120
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Polarity/channel type PNP PNP PNP PNP
Maximum power dissipation(Abs) 1 W 1 W 1 W 1 W
surface mount NO NO NO NO
Base Number Matches 1 1 1 1

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