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2SA1162-Y-TP

Description
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size211KB,2 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance
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2SA1162-Y-TP Overview

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3

2SA1162-Y-TP Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.15 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
Transistor component materialsSILICON
Nominal transition frequency (fT)80 MHz
Base Number Matches1
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

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$ %    !"#
2SA1162-O
2SA1162-Y
2SA1162-GR
Features
Capable of 0.15Watts of Power Dissipation.
Collector-current: 0.15A
Collector-base Voltage: -50V
Operating and storage junction temperature range: -55 to +150
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Halogen
free available upon request by adding suffix "-HF"
PNP Silicon
Plastic-Encapsulate
Transistor
SOT-23
A
D
C
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
Collector-Emitter Breakdown Voltage
(I
C
=-1mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=-100uAdc, I
E
=0)
Emitter-Base Breakdown Voltage
(I
E
=-100uAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=-50Vdc, I
E
=0)
Emitter Cutoff Current
(V
EB
=-5.0Vdc, I
C
=0)
DC Current Gain
(I
C
=-2.0mAdc, V
CE
=-6.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=-100mAdc, I
B
=-10mAdc)
Transistor Frequency
(I
C
=-1.0mAdc, V
CE
=-10Vdcz)
Collector Output Capacitance
(V
CB
=-10Vdc, I
E
=0, f=1MHz)
Noise Figure
(V
CE
=-6Vdc, I
C
=0.1mA, f=1KHz, R
g
=10K¡)
Rank
Range
Marking
O
70-140
SO
Y
120-240
SY
Min
-50
-50
-5
---
---
Max
---
---
---
-0.1
-0.1
Units
Vdc
Vdc
Vdc
uAdc
K
G
C
B
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
F
E
B
E
H
J
uAdc
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
DIMENSIONS
MM
MAX
.120
.104
.055
.041
.081
.024
.0039
.044
.007
.020
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
ON CHARACTERISTICS
h
FE
V
CE(sat)
70
---
400
-0.3
---
Vdc
SMALL-SIGNAL CHARACTERISTICS
f
T
Cob
NF
80
---
---
---
7
10
MHz
pF
dB
DIM
A
B
C
D
E
F
G
H
J
K
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
CLASSIFICATION OF H
FE (1)
GR
200-400
SG
.037
.950
.037
.950
www.mccsemi.com
Revision:
B
1 of 2
2013/01/01

2SA1162-Y-TP Related Products

2SA1162-Y-TP 2SA1162-GR-TP-HF 2SA1162-GR-TP 2SA1162-O-TP-HF 2SA1162-O-TP 2SA1162-Y-TP-HF
Description Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor,
Is it Rohs certified? conform to conform to conform to conform to conform to conform to
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compli compli compli compli compli compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.15 A 0.15 A 0.15 A 0.15 A 0.15 A 0.15 A
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V 50 V 50 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 120 200 200 70 70 120
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Humidity sensitivity level 1 1 1 1 1 1
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260 260 260 260
Polarity/channel type PNP PNP PNP PNP PNP PNP
surface mount YES YES YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 10 10 10 10 10 10
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 80 MHz 80 MHz 80 MHz 80 MHz 80 MHz 80 MHz
Base Number Matches 1 1 1 1 1 1
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