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2SA1787D

Description
Small Signal Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, NMP, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size43KB,5 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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2SA1787D Overview

Small Signal Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, NMP, 3 PIN

2SA1787D Parametric

Parameter NameAttribute value
Objectid1481158642
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage200 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typePNP
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Ordering number:ENN3581
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1787/2SC4650
High-Definition CRT Display
Video Output Applications
Features
· High breakdown voltage : V
CEO
≥200V.
· Small reverse transfer capacitance and excellent high
frequency characteristic:
C
re
=1.2pF (NPN), 1.7pF (PNP).
· Adoption of FBET processes.
Package Dimensions
unit:mm
2064A
[2SA1787/2SC4650]
2.5
1.45
6.9
1.0
4.5
1.0
0.6
1.0
0.9
1
2
3
0.5
0.45
( ) : 2SA1786
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Colletor Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
2.54
2.54
1 : Emitter
2 : Collector
3 : Base
SANYO : NMP
Ratings
(–)200
(–)200
(–)5
(–)100
(–)200
1.0
150
–55 to +150
4.0
1.0
Unit
V
V
V
mA
mA
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE
fT
VCB=(–)150V, IE=0
VEB=(–)4V, IC=0
VCE=(–)10V, IC=(–)10mA
VCE=(–)30V, IC=(–)10mA
60
150
Conditions
Ratings
min
typ
max
(–)0.1
(–)0.1
320
MHz
Unit
µA
µA
Continued on next page.
* : The 2SA1787/2SC4650 are classified by 10mA h
FE
as follows :
Rank
hFE
D
60 to 120
E
100 to 200
F
160 to 320
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
80103TN (KT)/83198HA (KT)/5180TA (KOTO) No.3581–1/5
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