2SC1815O datasheet, PDF - EEWORLD Datasheet

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2SC1815O: Description150mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size75KB，1 Pages; ManufacturerMicro Commercial Components (MCC)

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2SC1815O Overview

150mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3

2SC1815O Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	compli
Maximum collector current (IC)	0.15 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	70
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	80 MHz
Base Number Matches	1

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MCC

Features

•

omponents

20736 Marilla

Street Chatsworth

!"#

$ % !"#

2SC1815

2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF

Amplifier and General Purpose Applications.

Capable of 0.4Watts of Power Dissipation.

Collector-current 0.15A

Collector-base Voltage 60V

Marking Code: C1815

NPN Silicon

Epitaxial Transistor

TO-92

Pin Configuration

Bottom View

E

C

B

A

E

Electrical Characteristics @ 25

O

C Unless Otherwise Specified

Symbol

Parameter

Collector-Emitter Breakdown Voltage*

(I

C

=0.1mAdc, I

B

=0)

Collector-Base Breakdown Voltage

(I

C

=100uAdc, I

E

=0)

Emitter-Base Voltage

(I

E

=310mAdc)

Collector Cutoff Current

(V

CB

=60Vdc, I

E

=0Adc)

Collector Cutoff Current

(V

CB

=50Vdc, I

E

=0Adc)

Emitter Cutoff Current

(V

EB

=5.0Vdc, I

C

=0Adc)

DC Current Gain*

(I

C

=2.0mAdc, V

CE

=6.0Vdc)

Collector-Emitter Saturation Voltage

(I

C

=100mAdc, I

B

=10mAdc)

Base-Emitter Saturation Voltage

(I

C

=100mAdc, I

B

=10mAdc)

Base-Emitter Voltage

(I

E

=310mAdc)

Transistor Frequency

(I

C

=1.0mAdc, V

CE

=10Vdc, f=30MHz)

O

70-140

Y

120-240

Min

50

60

1.45

0.1

Max

Units

Vdc

B

OFF CHARACTERISTICS

V

(BR)CEO

V

(BR)CBO

V

BEF

I

CBO

I

CEO

I

EBO

C

Vdc

uAdc

D

ON CHARACTERISTICS

h

FE(1)

V

CE(sat)

V

BE(sat)

V

BE

70

700

0.25

1.0

1.45

Vdc

INCHES

DIM

A

B

C

D

E

G

MIN

.175

.500

.016

.135

.095

MAX

.185

---

.020

.145

.105

MIN

4.45

4.46

12.7

0.41

3.43

2.42

G

DIMENSIONS

MM

MAX

4.70

---

0.63

3.68

2.67

NOTE

---

SMALL-SIGNAL CHARACTERISTICS

f

T

80

GR

200-400

MHz

BL

350-700

CLASSIFICATION OF H

FE (1)

Rank

Range

www.mccsemi.com

Revision: 2

2003/06/30

2SC1815O Related Products

	2SC1815O	2SC1815BL	2SC1815GR	2SC1815Y
Description	150mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3	150mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3	150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3	150mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Parts packaging code	TO-92	TO-92	TO-92	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	PLASTIC PACKAGE-3
Contacts	3	3	3	3
Reach Compliance Code	compli	compli	compli	compli
Maximum collector current (IC)	0.15 A	0.15 A	0.15 A	0.15 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	70	350	200	120
JEDEC-95 code	TO-92	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
JESD-609 code	e0	e0	e0	e0
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	80 MHz	80 MHz	80 MHz	80 MHz
Base Number Matches	1	1	1	1

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