nc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (201) 376-2922
(212)227-6005
FAX: (201) 376-8960
2N/PN3567 • 2N/PN3568 • 2N/PN3569
NPN SMALL SIGNAL GENERAL PURPOSE AMPLIFIERS
DIFFUSED SILICON PLANAR* EPITAXIAL TRANSISTORS
ABSOLUTE MAXIMUM RATINGS (Note 1)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Lead Temperature (10 seconds)
Maximum
Power Dissipation
(Notes 2 & 3)
Total Dissipation at 25"C Case Temperature
at 25°C Ambient Temperature
Maximum Voltages and Currents
VEBO
Emitter to Base Voltage
VCBO
Collector to Base Voltage
Collector to Emitter Voltage (Notes 4 & 6)
Collector Current
Base Current
2N3567/8/9
-55°C tO
o
+125°C
125°C
260°C
0.8 W
0.3 W
2N/PN3568
5.0 V
80 V
60V
500 mA
100mA
PN3567/8/9
-55°
C to+150°C
150°C
260° C
LOW
0.625 W
2N/PN3567/9
5.0V
80V
40V
500mA
100mA
ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)
SYMBOL
CHARACTERISTIC
Collector Cutoff Current
Emitter Cutoff Current
Collector to Base Breakdown
Voltage
Emitter to Base Breakdown
Voltage
Collector to Emitter
Breakdown Voltage (Note 5)
DC Current Gain (Note 5)
Base to Emitter "On" Voltage
(Note 5)
Collector to Emitter Saturation
Voltage (Note 5)
Collector to Base Capacitance
Emitter to Base Capacitance
Magnitude of Common Emitter
Small Signal Current Gain
3.0
2N/PN3567
MIN. MAX
50
5.0
25
80
5.0
40
2N/PN3568
MIN. MAX
50
5.0
25
80
5.0
60
2N/PN3569
MIN. MAX
50
5.0
25
80
5.0
40
UNITS
nA
MA
nA
V
V
V
TEST CONDITIONS
V
C B
= 4 0 V , I
E
= 0
ICBO
•EBO
BVcBO
BV
E
BO
BVcEO
hFE
V
BE(ON)
v
CE(sat)
V
EB
= 4.o v, IC = Q
i
c
= o, IE - 10 MA
IB • 0, Ic " 30mA
VCB
= 4
°
v
. 'E
=
°.
T
A "
75
°
c
IE =o, IG= 100 MA '
40
40
120
1.1
40
40
120
1.1
100
100
300
1.1
V
V
PF
pF
V
CE
• 1.0V, I
C
= 150mA
V
CE
= 1.0 V, l
c
= 30mA
V
CE
• 1-°
v
. 'C = 150mA
1C - 150mA, I
B
- 15 mA
IE • 0, VCB - 10 V, f - 140kHz
I
C
= 0, V
EB
- 0,5 V, f - 140 kHz
VCE " 10V, l
c
= 50mA
f - 20 MHz
0.25
20
80
0.25
20
80
0.25
20
80
Ccb
•C
eb
|hfel
30
3.0
30
3.0
30
NOTES:
1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3. These ratings give a maximum junction temperature of 125 C and junction to case thermal resistance of 125 C/W (derating factor of 8.0 mW/°C);
junction to ambient thermal resistance of 333°C/W (derating factor of 3.0 mW/ ^C) for 2N3567, 2N3S68, and 2N3569. These ratings give a maxi-
mum junction temperature of 150
J
C/W and junction to case thermal resistance of 125
J
C/W (derating factor of 8.0 mW/ °C); junction to ambient
thermal resistance of 200°C/W (derating factor of 5.0 mW/°C) for PN3567, PN3568, and PN3569.
4. This rating refers to a high current point where collector to emitter voltage is lowest.
5. Pulse Conditions: length = 300 Ms; duty cycle = 1%.
6. Applicable 0 to 30 mA.
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