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2SA1536D

Description
Si, PNP, RF POWER TRANSISTOR, TO-126ML, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size40KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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2SA1536D Overview

Si, PNP, RF POWER TRANSISTOR, TO-126ML, 3 PIN

2SA1536D Parametric

Parameter NameAttribute value
Parts packaging codeSIP
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
Maximum collector current (IC)0.3 A
Collector-emitter maximum voltage70 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature140 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Maximum power dissipation(Abs)8 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)600 MHz
Base Number Matches1
Ordering number:ENN2435B
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1536/2SC3951
High-Definition CRT Display
Video Output Applications
Applications
· High definition CRT display video output, wide-band
amplifier.
Package Dimensions
unit:mm
2042B
[2SA1536/2SC3951]
8.0
1.0
1.4
Features
· High f
T
: f
T
=600MHz.
· High breakdown voltage : V
CEO
=70Vmin.
· Small reverse transfer capacitance and excellent high
-frequency characteristic :
C
re
=1.9pF/NPN, 2.4pF/PNP.
· Complementary PNP and NPN types.
· Adoption of FBET process.
· Micaless type.
( ) : 2SA1536
4.0
1.0
3.3
3.0
1.5
7.5
1.6
0.8
3.0
0.8
0.75
15.5
11.0
0.7
1
2
3
4.8
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Peak Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
1.7
2.4
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
Ratings
(–)80
(–)70
(–)3
(–)300
(–)600
1.3
Unit
V
V
V
mA
mA
W
W
Tc=25˚C
8
150
–55 to +150
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE1
hFE2
fT
VCB=(–)60V, IE=0
VEB=(–)2V, IC=0
VCE=(–)10V, IC=(–)50mA
VCE=(–)10V, IC=(–)200mA
VCE=(–)10V, IC=(–)100mA
40*
20
600
MHz
Conditions
Ratings
min
typ
max
(–)0.1
(–)1.0
320*
Unit
µA
µA
*h
FE
1 : The 2SA1536/2SC3951 are classified by 50mA h
FE
as follows :
Rank
hFE
C
40 to 80
D
60 to 120
E
100 to 200
F
160 to 320
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
53002RM (KT)/72098HA (KT)/9149MO/2247TA, TS No.2435-1/4

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