Transys
Electronics
L I M I T E D
SOT-89 Plastic-Encapsulated Transistors
2SB1308
FEATURES
Power dissipation
P
CM
:
Collector current
I
CM
:
Collector-base voltage
V
(BR)CBO
:
TRANSISTOR (PNP)
SOT-89
1. BASE
0.5
-3
-30
W (Tamb=25℃)
A
V
2. COLLECTOR
1
3. EMITTER
2
3
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
* Measured using pulse current.
unless otherwise specified)
Test
conditions
MIN
-30
-20
-6
-0.5
-0.5
82
390
-0.45
50
V
MHz
MAX
UNIT
V
V
V
µA
µA
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
*
V
CEsat
*
Ic=-50µA , I
E
=0
I
C
= -1mA , I
B
=0
I
E
=-50µA, I
C
=0
V
CB
=-20 V , I
E
=0
V
EB
=-5 V ,
I
C
=0
V
CE
=-2V, I
C
= -0.5A
I
C
=-1.5A, I
B
= -0.15A
V
CE
= -6V, I
C
=-50mA
f =30MHz
f
T
CLASSIFICATION OF h
FE
Rank
Range
P
82-180
Q
120-270
R
180-390
Marking
BFP,BFQ,BFR
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