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2SB1134Q

Description
5A, 50V, PNP, Si, POWER TRANSISTOR, TO-220AB, TO-220ML, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size45KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

2SB1134Q Overview

5A, 50V, PNP, Si, POWER TRANSISTOR, TO-220AB, TO-220ML, 3 PIN

2SB1134Q Parametric

Parameter NameAttribute value
Objectid1515380004
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
Shell connectionISOLATED
Maximum collector current (IC)5 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)70
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Maximum power dissipation(Abs)25 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)30 MHz
Ordering number:ENN2091B
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1134/2SD1667
50V/5A Switching Applications
Applications
· Relay drivers, high-speed inverters, and other general
high-current switching applications.
Package Dimensions
unit:mm
2041A
[2SB1134/2SD1667]
10.0
3.2
4.5
2.8
Features
· Low-saturation collector-to-emitter voltage :
V
CE(sat)
=–0.4V max/I
C
=(–)3A, I
B
=(–)0.3A.
· Micaless package facilitating mounting.
3.5
7.2
16.0
18.1
5.6
14.0
1.6
1.2
0.75
1 2
3
2.55
2.4
0.7
2.55
( ) : 2SB1134
2.55
2.55
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Mounted on ceramic board (250mm
2
×0.8mm)
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
Conditions
2.4
Ratings
(–)60
(–)50
(–)6
(–)5
(–)9
2
25
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE1
hFE2
fT
VCB=(–)40V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)1A
VCE=(–)2V, IC=(–)3A
VCE=(–)5V, IC=(–)1A
70*
30
30
MHz
Conditions
Ratings
min
typ
max
(–)0.1
(–)0.1
280*
Unit
mA
mA
* : The 2SB1134/2SD1667 are classified by 1A h
FE
as follows :
Rank
hFE
Q
70 to 140
R
100 to 200
S
140 to 280
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O2003TN (KOTO)/92098HA (KT)/10996TS (KOTO) 8-8812/4107AT, TS No.2091–1/4
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