®
2N2219A
2N2222A
HIGH SPEED SWITCHES
PRELIMINARY DATA
DESCRIPTION
The 2N2219A and 2N2222A are silicon Planar
Epitaxial NPN transistors in Jedec TO-39 (for
2N2219A) and in Jedec TO-18 (for 2N2222A)
metal case. They are designed for high speed
switching application at collector current up to
500mA, and feature useful current gain over a
wide range of collector current, low leakage
currents and low saturation voltage.
TO-18
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
Parameter
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Total Dissipation at T
amb
≤
25
o
C
for
2N2219A
for
2N2222A
at T
C
≤
25
o
C
for
2N2219A
for
2N2222A
Storage Temperature
Max. Operating Junction Temperature
Value
75
40
6
0.6
0.8
0.8
0.5
3
1.8
-65 to 175
175
Unit
V
V
V
A
A
W
W
W
W
o
o
T
stg
T
j
C
C
1/7
February 2003
2N2219A / 2N2222A
THERMAL DATA
TO-39
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
50
187.5
TO-18
83.3
300
o
o
C/W
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CBO
I
CEX
I
BEX
I
EBO
V
(BR)CBO
Parameter
Collector Cut-off
Current (I
E
= 0)
Collector Cut-off
Current (V
BE
= -3V)
Base Cut-off Current
(V
BE
= -3V)
Emitter Cut-off Current
(I
C
= 0)
Collector-Base
Breakdown Voltage
(I
E
= 0)
Test Conditions
V
CB
= 60 V
V
CB
= 60 V
V
CE
= 60 V
V
CE
= 60 V
V
EB
= 3 V
I
C
= 10
µA
75
T
j
= 150 C
o
Min.
Typ.
Max.
10
10
10
20
10
Unit
nA
µA
nA
nA
nA
V
V
(BR)CEO
∗
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current Gain
I
C
= 10 mA
40
V
I
E
= 10
µA
6
V
V
CE(sat)
∗
V
BE(sat)
∗
h
FE
∗
I
C
= 150 mA
I
C
= 500 mA
I
C
= 150 mA
I
C
= 500 mA
I
B
= 15 mA
I
B
= 50 mA
I
B
= 15 mA
I
B
= 50 mA
0.6
35
50
75
100
40
50
35
f = 1KHz
f = 1KHz
50
75
300
0.3
1
1.2
2
V
V
V
V
I
C
= 0.1 mA
V
CE
= 10 V
I
C
= 1 mA
V
CE
= 10 V
I
C
= 10 mA
V
CE
= 10 V
I
C
= 150 mA
V
CE
= 10 V
I
C
= 500 mA
V
CE
= 10 V
I
C
= 150 mA
V
CE
= 1 V
I
C
= 10 mA
V
CE
= 10 V
T
amb
= -55
o
C
I
C
= 1 mA
I
C
= 10 mA
I
C
= 20 mA
f = 100 MHz
I
C
= 0
I
E
= 0
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 20 V
f = 100KHz
f = 100 KHz
300
h
fe
∗
f
T
C
EBO
C
CBO
R
e(hie)
Small Signal Current
Gain
Transition Frequency
Emitter-Base
Capacitance
Collector-Base
Capacitance
Real Part of Input
Impedance
300
375
MHz
25
8
60
pF
pF
Ω
V
EB
= 0.5 V
V
CB
= 10 V
I
C
= 20 mA
f = 300MHz
V
CE
= 20 V
* Pulsed: Pulse duration = 300
µs,
duty cycle
≤
1 %
2/7
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