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2SA1298-Y-TP

Description
Small Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC, PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size335KB,3 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance
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2SA1298-Y-TP Overview

Small Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC, PACKAGE-3

2SA1298-Y-TP Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.8 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)160
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
Base Number Matches1
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

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2SA1298-O
2SA1298-Y
Features
Halogen
free available upon request by adding suffix "-HF"
Power switching application
Low frequency power amplifier application
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Rating
-30
-35
-5.0
-0.8
Unit
V
V
V
A
PNP General
Purpose Amplifier
SOT-23
A
D
Maximum Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
C
C
C
B
P
D
T
J
T
STG
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
c
BO
I
EBO
h
FE
Power Dissipation
Operating Junction Temperature
Storage Temperature
Parameter
Collector-Emitter Breakdown Voltage*
(I
C
=-10mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=-1mAdc, I
E
=0)
Emitter-Base Breakdown Voltage
(I
E
=-1mAdc, I
C
=0)
Collector cut-off Current
(V
CB
=-30Vdc,
I
E
=0
Emitter cut-off Current
(V
EB
=-5Vdc,
I
C
=0
DC Current Gain
(I
C
=-100mAdc, V
CE
=-1.0Vdc)
(I
C
=-800mAdc, V
CE
=-1.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=-500mAdc, I
B
=-20mAdc)
Base-Emitter Voltage
(I
C
=-10mAdc,
V
CE
=-1Vdc)
Transition Frequency
(I
C
=-10mAdc, V
CE
=-5Vdc)
Collector output capacitance
(I
E
=0, V
CB
=-10Vdc,f=1MHz)
-0.5
0.2
-55 to +150
-55 to +150
Min
-30
-35
-5.0
-0.1
-0.1
W
O
O
C
C
F
B
E
E
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Type
Max
Units
Vdc
Vdc
Vdc
uAdc
uAdc
DIM
A
B
C
D
E
F
G
H
J
K
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
G
H
J
K
DIMENSIONS
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
100
40
320
V
CE(sat)
V
BE
f
T
Cob
-0.4
-0.8
250
13
Vdc
Vdc
MHz
MAX
.120
.104
.055
.041
.081
.024
.0039
.044
.007
.020
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
.035
.900
pF
.079
2.000
inches
mm
CLASSIFICATION OF h
FE(1)
Rank
Range
MARKING
O
100-200
IO
Y
160-320
IY
.037
.950
.037
.950
www.mccsemi.com
Revision:
B
1 of
3
2013/01/01

2SA1298-Y-TP Related Products

2SA1298-Y-TP 2SA1298-O-TP 2SA1298-O-TP-HF 2SA1298-Y-TP-HF
Description Small Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC, PACKAGE-3 Small Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC, PACKAGE-3 Small Signal Bipolar Transistor, Small Signal Bipolar Transistor,
Is it Rohs certified? conform to conform to conform to conform to
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compli compli compli compli
ECCN code EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.8 A 0.8 A 0.8 A 0.8 A
Collector-emitter maximum voltage 30 V 30 V 30 V 30 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 160 100 100 160
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260 260
Polarity/channel type PNP PNP PNP PNP
surface mount YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 10 10 10 10
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz 250 MHz 250 MHz
Base Number Matches 1 1 1 1

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