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OM6N100SAV

Description
Power Field-Effect Transistor, 6A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size41KB,4 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

OM6N100SAV Overview

Power Field-Effect Transistor, 6A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN

OM6N100SAV Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-254AA
package instructionFLANGE MOUNT, S-MSFM-P3
Contacts3
Reach Compliance Codecompliant
Other featuresHIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)850 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage1000 V
Maximum drain current (ID)6 A
Maximum drain-source on-resistance2 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-254AA
JESD-30 codeS-MSFM-P3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)24 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
OM1N100SA OM5N100SA OM1N100ST
OM3N100SA OM6N100SA OM3N100ST
POWER MOSFET IN HERMETIC ISOLATED
JEDEC PACKAGE
1000V, Up To 6 Amp, N-Channel
MOSFET In Hermetic Metal Package
FEATURES
Isolated Hermetic Metal Package
Fast Switching
Low R
DS(on)
Available Screened To MIL-19500, TX, TXV And S
Ceramic Feedthroughs Also Available
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits.
MAXIMUM RATINGS
PART NUMBER
OM1N100SA
OM3N100SA
OM5N100SA
OM6N100SA
OM3N100ST
OM1N100ST
R
DS(on)
8.0
5.2
3.0
2.0
5.4
8.2
I
D
1.0A
3.5A
5.0A
6.0A
3.5A
1.0A
3.1
SCHEMATIC
DRAIN
PIN CONNECTION
TO-254AA
TO-257AA
GATE
SOURCE
1 2 3
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
1 2 3
4 11 R1
Supersedes 2 05 R0
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