2SB1140-TP datasheet, PDF - EEWORLD Datasheet

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2SB1140-TP: DescriptionSmall Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size71KB，2 Pages; ManufacturerMicro Commercial Components (MCC); Environmental Compliance

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2SB1140-TP Overview

Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3

2SB1140-TP Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
package instruction	SMALL OUTLINE, R-PSSO-F3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	2 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	60
JESD-30 code	R-PSSO-F3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	FLAT
Terminal location	SINGLE
Maximum time at peak reflow temperature	10
Transistor component materials	SILICON
Nominal transition frequency (fT)	80 MHz
Base Number Matches	1

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MCC

TM

Micro Commercial Components

omponents

20736 Marilla

Street Chatsworth

!"#

$ % !"#

2SB1140

2SB1140-R

2SB1140-S

PNP

Plastic-Encapsulate

Transistors

•

Features

Power dissipation: P

CM

= 0.5W(T

amb

=25 )

Collector current: I

CM

= -2A

Collector-base voltage: V

(BR)CBO

= -50V

Operating and storage junction temperature range

T

J

, T

stg

: -55 to + 150

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0 and MSL Rating 1

SOT-89

Max

---

-1.0

340

---

-0.3

-1.2

---

80

Unit

V

A

Electrical Characteristics @ 25

Symbol

V

CEO

V

CBO

V

EBO

I

CBO

I

EBO

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

Cob

Unless Otherwise Specified

Min

-50

-5.0

---

120

60

---

Typ

---

80

---

Parameter

Collector-Emitter Breakdown Voltage

(I

C

=-1000A, I

B

=0)

Collector-Base Breakdown Voltage

(I

C

=-10A, I

E

=0)

Emitter-Base Voltage

(I

E

=-10A, I

C

=0)

Collector Cut-off Current

(V

CB

=-50V, I

E

=0)

Emitter Cut-off Current

(V

EB

=-5V, I

C

=0)

DC Current Gain

(V

CE

=-2V, I

C

=-0.2A)

DC Current Gain

(V

CE

=-2V, I

C

=-1A)

Collector-Emitter Saturation Voltage

(I

C

=-1A, I

B

=-50mA)

Base-Emitter Saturation Voltage

(I

C

=-1A, I

B

=-50mA)

Transition Frequency

(V

CE

=-10Vdc, I

C

=50mAdc, f=200MHz)

Collector output capacitance

(V

CB

=-10V, I

E

=0, f=1MHz)

V

A

---

V

MHz

PF

B

K

E

C

D

3

G

F

2

H

1

J

1.BASE

2.COLLECTOR

3.EMITTER

CLASSIFICATION OF h

FE

Rank

Range

Marking

R

120-240

1L

S

170-340

www.mccsemi.com

Revision: 3

1 of 2

2008/01/01

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