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2SB1142-T

Description
Power Bipolar Transistor, 2.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126ML, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size47KB,5 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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2SB1142-T Overview

Power Bipolar Transistor, 2.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126ML, 3 PIN

2SB1142-T Parametric

Parameter NameAttribute value
Objectid1999575018
Parts packaging codeSIP
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)2.5 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Maximum power dissipation(Abs)10 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)140 MHz
Ordering number : EN2060B
2SB1142 / 2SD1682
SANYO Semiconductors
DATA SHEET
PNP / NPN Epitaxial Planar Silicon Transistors
2SB1142 / 2SD1682
Applications
50V / 2.5A High-Speed
Switching Applications
Power supplies, relay drivers, lamp drivers.
Features
Adoption of FBET and MBIT processes.
Low saturation voltage.
Large current capacity and wide ASO.
Specifications
( ) : 2SB1142
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
(--)60
(--)50
(-
-)6
(--)2.5
(--)5.0
1.5
10
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE1
hFE2
Conditions
VCB=(--)50V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)2V, IC=(-
-)100mA
VCE=(--)2V, IC=(--)2A
(100)*
100*
35
Ratings
min
typ
max
(--)100
(--)100
(400)*
560*
Unit
nA
nA
Continued on next page.
*
: The 2SB1142 / 2SD1682 are classified by 100mA hFE as follows :
2SB1142
2SD1682
Rank
hFE
hFE
R
100 to 200
100 to 200
S
140 to 280
140 to 280
T
200 to 400
200 to 400
U
280 to 560
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1806EA IM TC-00000203 / O2303TN(KOTO) / 92098HA(KT) / D151MH,(KOTO) No.2060-1/5

2SB1142-T Related Products

2SB1142-T 2SB1142-S 2SD1682-R 2SD1682-T 2SD1682-U 2SD1682-S 2SB1142-R
Description Power Bipolar Transistor, 2.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126ML, 3 PIN 2.5A, 50V, PNP, Si, POWER TRANSISTOR, TO-126, TO-126ML, 3 PIN Power Bipolar Transistor, 2.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126ML, 3 PIN 2.5A, 50V, NPN, Si, POWER TRANSISTOR, TO-126, TO-126ML, 3 PIN Power Bipolar Transistor, 2.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126ML, 3 PIN Power Bipolar Transistor, 2.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126ML, 3 PIN Power Bipolar Transistor, 2.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126ML, 3 PIN
Parts packaging code SIP SIP SIP SIP SIP SIP SIP
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3 3 3 3 3
Reach Compliance Code unknown unknown unknown unknown unknown unknow unknown
Maximum collector current (IC) 2.5 A 2.5 A 2.5 A 2.5 A 2.5 A 2.5 A 2.5 A
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V 50 V 50 V 50 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 200 140 100 200 280 140 100
JEDEC-95 code TO-126 TO-126 TO-126 TO-126 TO-126 TO-126 TO-126
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type PNP PNP NPN NPN NPN NPN PNP
Maximum power dissipation(Abs) 10 W 10 W 10 W 10 W 10 W 10 W 10 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 140 MHz 140 MHz 140 MHz 140 MHz 140 MHz 140 MHz 140 MHz
Objectid 1999575018 1481976919 1999575032 1481977161 1999575035 - 1696149276
ECCN code EAR99 - EAR99 - EAR99 EAR99 EAR99
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED -
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