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2SC3963-Y

Description
TRANSISTOR 0.2 A, 160 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, 2-8H1A, 3 PIN, BIP General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size143KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

2SC3963-Y Overview

TRANSISTOR 0.2 A, 160 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, 2-8H1A, 3 PIN, BIP General Purpose Power

2SC3963-Y Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.2 A
Collector-based maximum capacity10 pF
Collector-emitter maximum voltage160 V
ConfigurationSINGLE
Minimum DC current gain (hFE)160
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)1.5 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
VCEsat-Max1 V
Base Number Matches1
2SC3963
TOSHIBA Transistor
Silicon NPN Triple Diffused Type (PCT Process)
2SC3963
High-Voltage General Amplifier Applications
Color TV Class B Sound Output Applications
Unit: mm
High voltage: V
CEO
= 160 V
Absolute Maximum Ratings
(Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
200
160
5
200
100
1.5
150
−55
to 150
Unit
V
V
V
mA
mA
W
°C
°C
JEDEC
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
temperature/current/voltage and the significant change in
TOSHIBA
2-8H1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.82 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-10

2SC3963-Y Related Products

2SC3963-Y 2SC3963-O
Description TRANSISTOR 0.2 A, 160 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, 2-8H1A, 3 PIN, BIP General Purpose Power TRANSISTOR 0.2 A, 160 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, 2-8H1A, 3 PIN, BIP General Purpose Power
Is it Rohs certified? incompatible incompatible
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.2 A 0.2 A
Collector-based maximum capacity 10 pF 10 pF
Collector-emitter maximum voltage 160 V 160 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 160 100
JESD-30 code R-PSFM-T3 R-PSFM-T3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 1.5 W 1.5 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 50 MHz 50 MHz
VCEsat-Max 1 V 1 V
Base Number Matches 1 1

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