DTA114EM Series
Bias Resistor Transistor PNP Silicon
P b
Lead(Pb)-Free
1
BASE
R1
R2
COLLECTOR
3
3
1
2
2
EMITTER
SOT-723
Maximum Ratings
(T
A
=25°C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current-Continuous
Symbol
V
CBO
V
CEO
I
C
Value
50
50
100
Unit
V
V
mA
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board
FR-4 Board
(1)
T
A
=25˚C
Derate above 25˚C
Thermal Resistance, Junction to Ambient
(1)
Total Device Dissipation FR-5 Board
FR-4 Board
(2)
T
A
=25˚C
Derate above 25˚C
Thermal Resistance, Junction to Ambient
(2)
Junction Temperature Range
Storage Temperature Range
1. FR-4 @ Minimum pad
2. FR-4 @1.0 x 1.0 Inch pad
Symbol
P
D
R
θJA
P
D
R
θJA
T
J
Tstg
Max
260
2.0
480
600
4.8
205
-55 to +150
-55 to +150
Unit
mW
mW/°C
˚C/W
mW
mW/°C
°C/W
°C
°C
Device Marking and Resistor Values
Device
DTA114EM
DTA124EM
DTA144EM
DTA114YM
DTA114TM
DTA143TM
DTA123EM
Marking
6A
6B
6C
6D
6E
6F
6H
R1(K)
10
22
47
10
10
4.7
2.2
R2(K)
10
22
47
47
∞
∞
2.2
Device
DTA143EM
DTA143ZM
DTA124XM
DTA123JM
DTA115EM
DTA144WM
Marking
6J
6K
6L
6M
6N
6P
R1(K)
4.7
4.7
22
2.2
100
47
R2(K)
4.7
47
47
47
100
22
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DTA114EM Series
Electrical Characteristics
Characteristic
(T
A
= 25°C unless otherwise noted)
Symbol
Min
Typ
WEITRON
Max
Unit
Off Characteristics
Collector−Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
Collector−Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
Emitter−Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
DTA114EM
DTA124EM
DTA144EM
DTA114YM
DTA114TM
DTA143TM
DTA123EM
DTA143EM
DTA143ZM
DTA124XM
DTA123JM
DTA115EM
DTA144WM
I
CBO
I
CEO
I
EBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
50
50
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
100
500
0.5
0.2
0.1
0.2
0.9
1.9
2.3
1.5
0.18
0.13
0.2
0.05
0.13
−
−
nAdc
nAdc
mAdc
Collector−Base
Breakdown
Voltage (I
C
= 10 A, I
E
= 0)
Collector−Emitter
Breakdown
Voltage (Note 3.)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CBO
V
(BR)CEO
Vdc
Vdc
ON Characteristics
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
(Note 3.)
DTA114EM
DTA124EM
DTA144EM
DTA114YM
DTA114TM
DTA143TM
DTA123EM
DTA143EM
DTA143ZM
DTA124XM
DTA123JM
DTA115EM
DTA144WM
h
FE
35
60
80
80
160
160
8.0
15
80
80
80
80
80
−
60
100
140
140
250
250
15
27
140
130
140
150
140
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.25
Vdc
Collector−Emitter Saturation Voltage (I
C
= 10 mA, I
E
= 0.3 mA)
(I
C
= 10 mA, I
B
= 5 mA) DTA123EM
(I
C
= 10 mA, I
B
= 1 mA) DTA114TM/DTA143TM/
DTA143ZM/DTA124XM/DTA143EM
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 k )
DTA114EM
DTA124EM
DTA114YM
DTA114TM
DTA143TM
DTA123EM
DTA143EM
DTA143ZM
DTA124XM
DTA123JM
DTA144EM
DTA115EM
DTA144WM
V
CE(sat)
V
OL
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 k )
(V
CC
= 5.0 V, V
B
= 5.5 V, R
L
= 1.0 k )
(V
CC
= 5.0 V, V
B
= 4.0 V, R
L
= 1.0 k )
−
−
−
−
−
−
−
−
−
−
−
−
−
4.9
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
−
Vdc
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 k )
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 k
)
DTA114TM
DTA143TM
DTA123EM
DTA143EM
3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
V
OH
Vdc
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19-Jan-2012
DTA114EM Series
Electrical Characteristics
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Input Resistor
DTA114EM
DTA124EM
DTA144EM
DTA114YM
DTA114TM
DTA143TM
DTA123EM
DTA143EM
DTA143ZM
DTA124XM
DTA123JM
DTA115EM
DTA144WM
DTA114EM/DTA124EM/DTA144EM
DTA115EM
DTA114YM
DTA114TM/DTA143TM/DTA143EM
DTA123EM
DTA143ZM
DTA124XM
DTA123JM
DTA144WM
PD, POWER DISSIPATION (MILLIW ATTS)
300
250
200
150
100
50
0
R
JA
= 480°C/W
Symbol
R1
Min
7.0
15.4
32.9
7.0
7.0
3.3
1.5
3.3
3.3
15.4
1.54
70
32.9
0.8
0.17
−
0.8
0.055
0.38
0.038
1.7
Typ
10
22
47
10
10
4.7
2.2
4.7
4.7
22
2.2
100
47
1.0
0.21
−
1.0
0.1
0.47
0.047
2.1
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Max
13
28.6
61.1
13
13
6.1
2.9
6.1
6.1
28.6
2.86
130
61.1
1.2
0.25
−
1.2
0.185
0.56
0.056
2.6
Unit
k
Resistor Ratio
R
1
/R
2
0
50
100
T
A
, AMBIENT TEMPERATURE (°C)
150
Figure 1. Derating Curve
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DTA114EM Series
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VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1
I
C
/I
B
= 10
1000
hFE , DC CURRENT GAIN (NORMALIZED)
V
CE
= 10 V
T
A
= −25°C
0.1
75°C
25°C
T
A
= 75°C
100
25°C
−25°C
0.01
0
20
I
C
, COLLECTOR CURRENT (mA)
40
50
10
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 2. V
CE(sat)
versus I
C
Figure 3. DC Current Gain
4
f = 1 MHz
l
E
= 0 V
T
A
= 25°C
100
75°C
25°C
T
A
= −25°C
Cob , CAPACITANCE (pF)
3
IC, COLLECTOR CURRENT (mA)
10
1
2
0.1
1
0.01
0.001
0
1
2
V
O
= 5 V
3
4
5
6
7
V
in
, INPUT VOLTAGE (VOLTS)
8
9
10
0
0
10
20
30
40
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
100
V
O
= 0.2 V
V in , INPUT VOLTAGE (VOLTS)
10
T
A
= −25°C
25°C
75°C
1
0.1
0
10
20
30
I
C
, COLLECTOR CURRENT (mA)
40
50
Figure 6. Input Voltage versus Output Current
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DTA114EM Series
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VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
10
I
C
/I
B
= 10
hFE , DC CURRENT GAIN (NORMALIZED)
1000
V
CE
= 10 V
1
T
A
= −25°C
25°C
T
A
= 75°C
100
25°C
−25°C
75°C
0.1
0.01
0
20
I
C
, COLLECTOR CURRENT (mA)
40
50
10
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 7. V
CE(sat)
versus I
C
Figure 8. DC Current Gain
4
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
l
E
= 0 V
T
A
= 25°C
100
75°C
10
25°C
T
A
= −25°C
Cob , CAPACITANCE (pF)
3
1
2
0.1
1
0.01
0
1
2
3
4
5
6
7
V
in
, INPUT VOLTAGE (VOLTS)
8
V
O
= 5 V
9
10
0
0
10
20
30
40
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100
V in , INPUT VOLTAGE (VOLTS)
V
O
= 0.2 V
T
A
= −25°C
10
75°C
25°C
1
0.1
0
10
20
30
I
C
, COLLECTOR CURRENT (mA)
40
50
Figure 11. Input Voltage versus Output Current
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