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2SA968B-Y

Description
TRANSISTOR 1.5 A, 200 V, PNP, Si, POWER TRANSISTOR, TO-220AB, BIP General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size88KB,2 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

2SA968B-Y Overview

TRANSISTOR 1.5 A, 200 V, PNP, Si, POWER TRANSISTOR, TO-220AB, BIP General Purpose Power

2SA968B-Y Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)1.5 A
Collector-emitter maximum voltage200 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Maximum power consumption environment25 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
VCEsat-Max1.5 V
Base Number Matches1

2SA968B-Y Related Products

2SA968B-Y 2SA968B-O
Description TRANSISTOR 1.5 A, 200 V, PNP, Si, POWER TRANSISTOR, TO-220AB, BIP General Purpose Power TRANSISTOR 1.5 A, 200 V, PNP, Si, POWER TRANSISTOR, TO-220AB, BIP General Purpose Power
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 1.5 A 1.5 A
Collector-emitter maximum voltage 200 V 200 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 120 70
JEDEC-95 code TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type PNP PNP
Maximum power consumption environment 25 W 25 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz
VCEsat-Max 1.5 V 1.5 V
Base Number Matches 1 1

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