100mA / 50V Digital transistors
(with built-in resistors)
DTC115EEB
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see equivalent circuit).
2) Each bias resistor is a thin-film resistor.
Since they are completely insulated,
the input can be negatively biased. The insulation also
eliminates most of the parasitic effects.
3) Only the on / off conditions need to be set for operation,
making the device design easy.
Structure
NPN silicon epitaxial planar digital transistor
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
DTC115EEB
R
1
Dimensions
(Unit : mm)
EMT3F
(3)
(1)
(2)
Abbreviated symbol : 29
(1) IN
(2) GND
(3) OUT
Each lead has same dimensions
Inner circuit
Taping
TR
3000
R
2
OUT
(3)
Absolute maximum ratings
(Ta=25°C)
Parameter
Symbol
V
CC
V
IN
I
C(Max.)
∗1
I
O
P
D
Tj
Tstg
∗2
(1)
IN
(2)
GND
Limits
50
−10
to 40
100
20
150
150
−55
to
+150
Unit
IN
OUT
GND
Supply voltage
Input voltage
Collector current
Output Current
Power dissipation
Junction temperature
Range of storage temperature
V
V
mA
mA
mW
°C
°C
R
1
=100kΩ, R
2
=100kΩ
∗1
Characteristics of built-in transistor
∗2
Each terminal mounted on a recommended land
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2009 ROHM Co., Ltd. All rights reserved.
1/2
2009.07 - Rev.B
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Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
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