IS62WV10248DALL/BLL
IS65WV10248DALL/BLL
1M x 8 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC RAM
FEATURES
• High-speed access time: 45ns, 55ns
• CMOS low power operation
– 36 mW (typical) operating
– 12 µW (typical) CMOS standby
• TTL compatible interface levels
• Single power supply
– 1.65V--2.2V V
dd
(62/65WV10248dALL)
– 2.4V--3.6V V
dd
(62/65WV10248dBLL)
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Automotive temperature (-40
o
C to +125
o
C)
• Lead-free available
PRELIMINARY INFORMATION
MARCH 2009
high-speed, 8M bit static RAMs organized as 1M words
by 8 bits. It is fabricated using
ISSI
's high-performance
CMOS technology. This highly reliable process coupled
with innovative circuit design techniques, yields high-
performance and low power consumption devices.
When
CS1
is HIGH (deselected) or when CS2 is LOW
(deselected), the device assumes a standby mode at
which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE)
controls both writing and reading of the memory.
The IS62WV10248DALL and IS62WV10248DBLL are
packaged in the JEDEC standard 48-pin mini BGA (9mm
x 11mm) and
44-Pin TSOP (TYPE II).
DESCRIPTION
The
ISSI
IS62WV10248DALL/ IS62WV10248DBLL are
FUNCTIONAL BLOCK DIAGRAM
A0-A19
DECODER
1M x 8
MEMORY ARRAY
V
DD
GND
I/O
DATA
CIRCUIT
I/O0-I/O7
COLUMN I/O
CS2
CS1
OE
WE
CONTROL
CIRCUIT
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00B
03/04/09
1
IS62WV10248DALL/BLL, IS65WV10248DALL/BLL
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
term
t
BIAS
V
dd
t
Stg
P
t
Parameter
Terminal Voltage with Respect to GND
Temperature Under Bias
V
dd
Related to GND
Storage Temperature
Power Dissipation
Value
–0.2 to V
dd
+0.3
–40 to +125
–0.2 to +3.8
–65 to +150
1.0
Unit
V
°C
V
°C
W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rat-
ing conditions for extended periods may affect reliability.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
V
oh
V
oL
V
Ih
V
IL
(1)
I
LI
I
Lo
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
Test Conditions
I
oh
=
-0.1 mA
I
oh
=
-1 mA
I
oL
=
0.1 mA
I
oL
=
1 mA
V
DD
1.65-2.2V
2.4-3.6V
1.65-2.2V
2.4-3.6V
1.65-2.2V
2.4-3.6V
1.65-2.2V
2.4-3.6V
Min.
1.4
1.8
—
—
1.4
2.0
–0.2
–0.2
–1
–1
Max.
—
—
0.2
0.4
V
dd
+ 0.2
V
dd
+ 0.3
0.4
0.8
1
1
Unit
V
V
V
V
V
V
V
V
µA
µA
GND ≤
V
In
≤
V
dd
GND ≤
V
out
≤
V
dd
,
Outputs Disabled
Notes:
1.
V
IL
(min.) = –0.3V dC;
V
IL
(min) = -2.0V AC (pulse width < 10ns). Not 100% tested.
V
Ih
(max.) = V
dd
+ 0.3V dC;
V
Ih
(max) = V
dd
+ 2.0V AC (pulse width < 10ns). Not 100% tested.
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00B
03/04/09
京公网安备 11010802033920号
EEWORLD
