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PDTA144WE

Description
Small Signal Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size416KB,15 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Environmental Compliance
Download Datasheet Parametric Compare View All

PDTA144WE Overview

Small Signal Bipolar Transistor

PDTA144WE Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNexperia
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompliant
Other featuresBUILT IN BIAS RESISTANCE RATIO IS 0.47
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)60
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia

PDTA144WE Related Products

PDTA144WE 934054703115 PDTA144WT PDTA144WU PDTA144WM PDTA144WS PDTA144WEF PDTA144WUT/R 934057526215
Description Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to conform to conform to
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 CHIP CARRIER, R-PBCC-N3 CYLINDRICAL, O-PBCY-T3 SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant compliant
Other features BUILT IN BIAS RESISTANCE RATIO IS 0.47 BUILT IN BIAS RESISTANCE RATIO IS 0.47 BUILT IN BIAS RESISTANCE RATIO IS 0.47 BUILT IN BIAS RESISTANCE RATIO IS 0.47 BUILT IN BIAS RESISTANCE RATIO IS 0.47 BUILT IN BIAS RESISTANCE RATIO IS 0.47 BUILT IN BIAS RESISTANCE RATIO IS 0.47 BUILT IN BIAS RESISTANCE RATIO IS 0.47 BUILT IN BIAS RESISTANCE RATIO IS 0.47
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 60 60 60 60 60 60 60 60 60
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PBCC-N3 O-PBCY-T3 R-PDSO-F3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3 e3 e3 e3 e3 e3 e3 e3
Number of components 1 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR ROUND RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE CHIP CARRIER CYLINDRICAL SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP PNP PNP PNP PNP PNP PNP PNP
surface mount YES YES YES YES YES NO YES YES YES
Terminal surface Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn) Matte Tin (Sn) TIN Tin (Sn) Tin (Sn)
Terminal form GULL WING GULL WING GULL WING GULL WING NO LEAD THROUGH-HOLE FLAT GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL BOTTOM BOTTOM DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Maker Nexperia Nexperia Nexperia Nexperia Nexperia Nexperia Nexperia Nexperia -
Humidity sensitivity level 1 1 1 1 1 - - 1 1
Peak Reflow Temperature (Celsius) 260 NOT SPECIFIED 260 260 260 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
Maximum time at peak reflow temperature 30 NOT SPECIFIED 30 30 30 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -

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