DTD543Z series
NPN 500mA 12V Digital Transistors
(Bias Resistor Built-in Transistors)
Datasheet
lOutline
Parameter
Value
VMT3
OUT
IN
GND
IN
GND
EMT3
OUT
V
CC
I
C(MAX.)
R
1
R
2
lFeatures
1) Built-In Biasing Resistors
12V
500mA
4.7kW
47kW
DTD543ZM
(SC-105AA)
DTD543ZE
SOT-416 (SC-75A)
lInner
circuit
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
3) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
4) Only the on/off conditions need to be set for
operation, making the circuit design easy.
5) Complementary PNP Types :DTB543Z series
6) Lead Free/RoHS Compliant.
lApplication
Switching circuit, Inverter circuit, Interface circuit,
Driver circuit
lPackaging
specifications
Part No.
DTD543ZM
DTD543ZE
Package
VMT3
EMT3
Package
size
(mm)
1212
1616
Taping
code
T2L
TL
Basic
Reel size Tape width
ordering
(mm)
(mm)
unit (pcs)
180
180
8
8
8,000
3,000
Marking
Y23
Y23
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© 2012 ROHM Co., Ltd. All rights reserved.
1/6
2012.08 - Rev.B
DTD543Z series
lAbsolute
maximum ratings
(Ta = 25°C)
Parameter
Supply voltage
Input voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Symbol
V
CC
V
IN
I
C(MAX.)*1
P
D *2
T
j
T
stg
Values
12
-5
to
+12
500
150
150
-55
to
+150
Data Sheet
Unit
V
V
mA
mW
°C
°C
lElectrical
characteristics(Ta
= 25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T *1
Conditions
V
CC
= 5V, I
O
= 100mA
V
O
= 0.3V, I
O
= 20mA
I
O
/ I
I
= 100mA / 5mA
V
I
= 5V
V
CC
= 12V, V
I
= 0V
V
O
= 2V, I
O
= 100mA
-
-
V
CE
= 10V, I
E
=
-5mA,
f = 100MHz
Min.
-
1.2
-
-
-
140
3.29
8
-
Typ.
-
-
0.06
-
-
-
4.7
10
260
Max.
0.3
-
0.3
1.4
0.5
-
6.11
12
-
Unit
V
V
mA
mA
-
kW
-
MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
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© 2012 ROHM Co., Ltd. All rights reserved.
2/6
2012.08 - Rev.B
DTD543Z series
lElectrical
characteristic curves(Ta
= 25°C)
Data Sheet
Fig.1 Input voltage vs. output current
(ON characteristics)
10
V
O
= 0.3V
Fig.2 Output current vs. input voltage
(OFF characteristics)
100
V
CC
= 5V
1
Ta=
-40ºC
25ºC
85ºC
125ºC
OUTPUT CURRENT : I
O
[mA]
INPUT VOLTAGE : V
I(on)
[V]
10
1
Ta= 125ºC
85ºC
25ºC
-40ºC
0.1
0.01
0.1
0.1
1
10
100
1000
0
0.5
1
1.5
2
OUTPUT CURRENT : I
O
[mA]
INPUT VOLTAGE : V
I(off)
[V]
Fig.3 Output current vs. output voltage
400
Ta= 25ºC
350
Fig.4 DC current gain vs. output current
1000
V
O
= 5V
I
I
=
2.0mA
1.8mA
1.4mA
1.2mA
1.0mA
1.6mA
OUTPUT CURRENT : I
O
[mA]
DC CURRENT GAIN : G
I
300
250
200
150
100
50
0
0
0.1
0.2
0.3
0.4
100
0.8mA
0.6mA
0.4mA
0.2mA
0mA
Ta= 125ºC
85ºC
25ºC
-40ºC
10
0.5
1
0.01
0.1
1
10
100
1000
OUTPUT VOLTAGE : V
O
[V]
OUTPUT CURRENT : I
O
[mA]
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© 2012 ROHM Co., Ltd. All rights reserved.
3/6
2012.08 - Rev.B
DTD543Z series
lElectrical
characteristic curves(Ta
= 25°C)
Data Sheet
Fig.5 Output voltage vs. output current
1
I
O
/I
I
=20/1
OUTPUT VOLTAGE : V
O(on)
[V]
0.1
Ta= 125ºC
85ºC
25ºC
-40ºC
0.01
0.001
1
10
100
1000
OUTPUT CURRENT : I
O
[mA]
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© 2012 ROHM Co., Ltd. All rights reserved.
4/6
2012.08 - Rev.B
DTD543Z series
lDimensions
(Unit : mm)
D
b1
c
Data Sheet
VMT3
A
L
e
b
H
E
x
S A
b3
l1
Lp
A
A1
S
l1
b2
e
Patterm of terminal position areas
DIM
A
A1
b
b1
c
D
E
e
H
E
L
Lp
x
DIM
e1
b2
b3
l1
MILIMETERS
MIN
MAX
0.45
0.55
0.00
0.10
0.17
0.27
0.27
0.37
0.08
0.18
1.10
1.30
0.70
0.90
0.40
1.10
1.30
0.10
0.30
0.20
0.40
-
0.10
MILIMETERS
MIN
MAX
0.80
-
0.37
-
0.47
-
0.50
INCHES
MIN
0.018
0
0.007
0.011
0.003
0.043
0.028
0.02
0.043
0.004
0.008
-
INCHES
MIN
0.03
-
-
-
0.015
0.019
0.02
MAX
0.051
-
-
0.004
MAX
0.022
0.004
0.011
0.015
0.007
0.051
0.035
Dimension in mm/inches
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© 2012 ROHM Co., Ltd. All rights reserved.
e1
5/6
2012.08 - Rev.B