LDTD123ESLT1 datasheet, PDF - EEWORLD Datasheet

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LDTD123ESLT1: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 1-Element, NPN, Silicon; CategoryDiscrete semiconductor The transistor; File Size125KB，4 Pages; ManufacturerLRC; Websitehttp://www.lrc.cn

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LDTD123ESLT1 Overview

Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, NPN, Silicon

LDTD123ESLT1 Parametric

Parameter Name	Attribute value
Maker	LRC
package instruction	,
Reach Compliance Code	unknown
Maximum collector current (IC)	0.5 A
Minimum DC current gain (hFE)	39
Number of components	1
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.3 W
surface mount	YES
Transistor component materials	SILICON

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Digital transistors

Features

1)Built-in bias resistors enable the

configuration of an inverter circuit

without connecting external input

resistors (see equivalent circuit).

2)The bias resistors consist of thin-

film resistors with complete isola-

tion to allow negative biasing of the

input. They also have the advan-

tage of almost completely eliminat-

ing parasitic effects.

3)Only the on/off conditions need to

be set for operation, making device

design easy.

●

Structure

NPN digital transistor

(Built-in resistor type)

●

LDTD123ELT1

SOT–23

Driver Marking

LDTD123ELT1 =F22

●

Equivalent circuit

3

1

2

LDTD123ELT1–1/4

LDTD123ESLT1 Related Products

	LDTD123ESLT1	LDTD123EKLT1
Description	Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, NPN, Silicon	Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, NPN, Silicon
Maker	LRC	LRC
Reach Compliance Code	unknown	unknown
Maximum collector current (IC)	0.5 A	0.5 A
Minimum DC current gain (hFE)	39	39
Number of components	1	1
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	0.3 W	0.2 W
surface mount	YES	YES
Transistor component materials	SILICON	SILICON

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