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DTA114GE

Description
100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size111KB,6 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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DTA114GE Overview

100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR

DTA114GE Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)30
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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General Purpose Transistor
PNP Bipolar Junction Transistor
with a 10 k
W
Base–Emitter Resistor
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current
Base Current
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 85°C
Thermal Resistance — Junction to Ambient (1)
Operating and Storage Temperature Range
1. Minimum FR–4 or G–10 PCB, Operating to Steady State.
Symbol
VCEO
VCBO
VEBO
IC
IB
PD
PD
R
q
JA
Value
50
50
5.0
100
20
150
78
833
–55 to 150
Unit
V
V
V
mA
mA
mW
mW
°C/W
°C
DTA114GE
50 Volts
100 mAmps
150 mW
3
2
1
CASE 463–01
SOT–416/SC–90
COLLECTOR (3)
BASE (1)
RBE
EMITTER (2)
RBE = 10 k
W
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 50
µAdc)
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc)
Collector–Emitter Breakdown Voltage
(IE = 720
m
Adc)
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0 Adc)
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0 Adc)
ON CHARACTERISTICS
DC Current Gain
(VCE = 5.0 Vdc, IC = 5.0 mAdc)
Collector–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 500
m
Adc)
hFE
30
VCE(sat)
0.3
Vdc
BVCBO
50
BVCEO
50
BVEBO
5.0
ICBO
IEBO
300
580
0.5
Vdc
Vdc
Vdc
Symbol
Min
Typ
Max
Unit
m
Adc
m
Adc
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Thermal Clad is a trademark of the Bergquist Company
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1998
1

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Index Files: 1306  1705  1995  163  894  27  35  41  4  18 
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