This product complies with the RoHS Directive (EU 2002/95/EC).
Power Transistors
2SB1156
Silicon PNP epitaxial planar type
For power switching
Complementary to 2SD1707
(0.7)
Unit: mm
15.0
±0.3
11.0
±0.2
5.0
±0.2
(3.2)
■
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
T
a
=
25°C
Junction temperature
Storage temperature
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Symbol
V
CEO
I
CBO
I
EBO
h
FE1
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Di
Forward current transfer ratio
Collector-emitter saturation voltage
M
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE2
Publication date: March 2003
R
60 to 120
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(3.5)
Solder Dip
M
Di ain
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d
■
Features
•
Low collector-emitter saturation voltage V
CE(sat)
•
Satisfactory linearity of forward current transfer ratio h
FE
•
Large collector current I
C
•
Full-pack package which can be installed to the heat sink with one
screw
21.0
±0.5
15.0
±0.2
16.2
±0.5
φ
3.2
±0.1
2.0
±0.2
2.0
±0.1
1.1
±0.1
0.6
±0.2
Rating
−130
−80
−7
−20
−30
100
3
Unit
V
V
5.45
±0.3
10.9
±0.5
2
1
3
V
A
A
1: Base
2: Collector
3: Emitter
EIAJ: SC-92
TOP-3F-A1 Package
W
150
°C
T
stg
−55
to
+150
°C
Conditions
Min
−80
Typ
Max
−10
Unit
V
µA
I
C
= −10
mA, I
B
=
0
V
EB
= −5
V, I
C
=
0
V
CB
= −100
V, I
E
=
0
sc
on
−50
260
µA
V
CE
= −2
V, I
C
= −
0.1 A
V
CE
= −2
V, I
C
= −3
A
V
CE
= −2
V, I
C
= −10
A
I
C
= −8
A, I
B
= −
0.4 A
I
C
= −20
A, I
B
= −2
A
I
C
= −20
A, I
B
= −2
A
I
C
= −8
A, I
B
= −
0.4 A
45
na
nc
e/
h
FE2 *
h
FE3
60
30
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
f
T
V
BE(sat)2
t
on
t
stg
t
f
−
0.5
−1.5
−2.5
−1.5
V
ain
te
V
V
CE
= −10
V, I
C
= −
0.5 A, f
=
10 MHz
I
C
= −8
A, I
B1
= −
0.8 A, I
B2
=
0.8 A
V
CC
= −50
V
30
MHz
µs
µs
µs
0.5
1.0
0.2
Q
90 to 180
P
130 to 260
SJD00044BED
Ordering can be made by the common rank (PQ rank
h
FE2
=
60 to 240) in the rank classification.
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB1156
P
C
T
a
200
−20
(1)T
C
=Ta
(2)With a 100×100×2mm
Al heat sink
(3)Without heat sink
(P
C
=3W)
I
B
=–300mA
T
C
=25˚C
I
C
V
CE
Collector-emitter saturation voltage V
CE(sat)
(V)
−10
V
CE(sat)
I
C
(1) I
C
/I
B
=10
(2) I
C
/I
B
=20
T
C
=25 C
Collector power dissipation P
C
(W)
160
−16
Collector current I
C
(A)
–200mA
120
(1)
−12
–140mA
–100mA
−1
(2)
(1)
(2)
(3)
0
0
25
50
75
100
125
150
Ambient temperature T
a
(°C)
V
CE(sat)
I
C
−10
Base-emitter saturation voltage V
BE(sat)
(V)
I
C
/I
B
=10
−1
T
C
=100˚C
25˚C
−
0.1
–25˚C
−
0.01
−
0.1
−1
−10
Collector current I
C
(A)
f
T
I
C
Di
Turn-on time t
on
, Storage time t
stg
, Fall time t
f
(
µs
)
1 000
Transition frequency f
T
(MHz)
na
nc
V
CE
=–10V
f=10MHz
T
C
=25˚C
Collector current I
C
(A)
100
M
10
1
0.1
−
0.01
−
0.1
−1
−10
Collector current I
C
(A)
2
tin
ue
Pl
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ea
ne clu
se
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m R ue ue yp typ r P
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du
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ct
d
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–20mA
M
Di ain
sc te
on na
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ue e/
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80
−8
–80mA
–60mA
−
0.1
40
−4
–40mA
0
0
−2
−4
−6
−8
−10
−12
−
0.01
−
0.1
−1
−10
Collector-emitter voltage V
CE
(V)
Collector current I
C
(A)
V
BE(sat)
I
C
h
FE
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
I
C
/I
B
=10
V
CE
=–2V
1 000
−10
Forward current transfer ratio h
FE
T
C
=100˚C
25˚C
100
−1
T
C
=–25˚C
–25˚C
100˚C
25˚C
−
0.1
10
−
0.01
−
0.01
−
0.1
−1
−10
1
−
0.1
−1
−10
Collector current I
C
(A)
Collector current I
C
(A)
sc
on
t
on
, t
stg
, t
f
I
C
Safe operation area
10
−100
e/
I
CP
I
C
Non repetitive pulse
T
C
=25˚C
t=1ms
t
stg
−10
t=10ms
te
1
t
on
ain
DC
t
f
−1
0.1
0.01
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=10
(–I
B1
=I
B2
)
V
CC
=–50V
T
C
=25˚C
−
0.1
0
−2
−4
−6
−8
−
0.01
−1
−10
−100
−1
000
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
SJD00044BED
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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ue
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du
pa ou e pe
ct
d
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life
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cy
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.co inf
sta
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.
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M
ain
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M
Di ain
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