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2SC2995-O

Description
TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, 2-4E1A, 3 PIN, BIP RF Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size313KB,6 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

2SC2995-O Overview

TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, 2-4E1A, 3 PIN, BIP RF Small Signal

2SC2995-O Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.05 A
Collector-based maximum capacity1.3 pF
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)70
highest frequency bandVERY HIGH FREQUENCY BAND
JESD-30 codeR-PSIP-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)350 MHz
Base Number Matches1

2SC2995-O Related Products

2SC2995-O 2SC2995-R 2SC2995-Y
Description TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, 2-4E1A, 3 PIN, BIP RF Small Signal TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, 2-4E1A, 3 PIN, BIP RF Small Signal TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, 2-4E1A, 3 PIN, BIP RF Small Signal
Is it Rohs certified? incompatible incompatible incompatible
package instruction IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Contacts 3 3 3
Reach Compliance Code unknow unknow unknow
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 0.05 A 0.05 A 0.05 A
Collector-based maximum capacity 1.3 pF 1.3 pF 1.3 pF
Collector-emitter maximum voltage 30 V 30 V 30 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 70 40 120
highest frequency band VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND
JESD-30 code R-PSIP-T3 R-PSIP-T3 R-PSIP-T3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 125 °C 125 °C 125 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 0.2 W 0.2 W 0.2 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 350 MHz 350 MHz 350 MHz
Base Number Matches 1 1 1
JESD-609 code e0 - e0
Terminal surface TIN LEAD - TIN LEAD

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