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Datasheet> All Categories > Discrete semiconductor> The transistor> 2SB744-BP
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2SB744-BP

Description
Power Bipolar Transistor, 3A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size334KB，2 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance
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2SB744-BP Overview

Power Bipolar Transistor, 3A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3

2SB744-BP Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeSIP
package instructionPLASTIC PACKAGE-3
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
Maximum collector current (IC)3 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1

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Micro Commercial Components
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2SB744
Features
•
•
•
•
Capable of 10Watts of Power Dissipation.
Collector-current 3.0A
Collector-base Voltage 70V
O
Operating and storage junction temperature range: -55 C to
O
+150 C
UL Flammability
PNP Silicon
Power Transistor

•
•
Maximum Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
C
T
J
T
STG
Case Material: Molded Plastic.
Classification Rating 94V-0
Marking:B744
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
Junction Temperature
Storage Temperature
Rating
45
70
5.0
3.0
10
-55 to +150
-55 to +150
Unit
V
V
V
A
W
O
C
O
C
A
K
D
R
E
B
F
G
L
M
N
P
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
Collector-Emitter Sustaining Voltage
(I
C
=1.0mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=1.0mAdc, I
E
=0)
Emitter-Base Breakdown Voltage
(I
E
=1.0mAdc, I
C
=0)
Forward Current Transfer ratio
(I
C
=20mAdc, V
CE
=5.0Vdc)
Forward Current Transfer ratio
(I
C
=0.5Adc, V
CE
=5.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=1.5Adc, I
B
=0.15Adc)
Min
45
70
5.0
Max
---
---
---
Units
Vdc
Vdc
H
C
OFF CHARACTERISTICS
V
CEO(SUS)
V
(BR)CBO
V
(BR)EBO
1
2
J
3
J
Q
EMITTER
COLLECTOR
BASE
Vdc
PIN 1.
PIN 2.
PIN 3.
ON CHARACTERISTICS
h
FE(1)
h
FE(2)
V
CE(sat)
30
60
---
---
320
2.0
---
---
Vdc
















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Revision: 3
1 of 2
2006/05/17

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